BCW30LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW30LT1G
Código: C2
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 32 V
Tensión colector-emisor (Vce): 32 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hFE): 215
Encapsulados: SOT23
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BCW30LT1G datasheet
bcw30lt1g.pdf
BCW30LT1 General Purpose Transistors PNP Silicon http //onsemi.com Features Pb-Free Packages are Available COLLECTOR 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO -32 Vdc 2 EMITTER Collector - Base Voltage VCBO -32 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -100 mAdc 3 THERMAL CHARACTERISTICS Characteris
bcw30lt1g sbcw30lt1g.pdf
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sbcw30lt1g.pdf
BCW30LT1G, SBCW30LT1G General Purpose Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) CASE 318-08 STYLE 6 COLLECTOR MAXIMUM RATINGS 3 Ratin
bcw29lt1 bcw30lt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW29LT1/D General Purpose Transistors BCW29LT1 PNP Silicon COLLECTOR BCW30LT1 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 32 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 32 Vdc SOT 23 (TO 236AB) Emitter Base Voltage VEBO 5.0 Vdc
Otros transistores... BCP56-10T3G, BCP5616Q, BCP56-16T1G, BCP56-16T3G, BCP56T1G, BCP56T3G, BCP68T1G, BCP69T1G, BC556, BCW32LT1G, BCW33LT1G, BCW33LT3G, BCW35X, BCW65ALT1G, BCW65CLT1G, BCW66GLT1G, BCW68GLT1G
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