BCW33LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCW33LT1G  📄📄 

Código: D3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 32 V

Tensión colector-emisor (Vce): 32 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 420

Encapsulados: SOT23

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BCW33LT1G datasheet

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BCW33LT1G

BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value Unit C

 ..2. Size:148K  onsemi
 bcw33lt1g.pdf pdf_icon

BCW33LT1G

BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features http //onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value U

 0.1. Size:144K  onsemi
 sbcw33lt1g.pdf pdf_icon

BCW33LT1G

BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features http //onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value U

 6.1. Size:371K  motorola
 bcw33lt1.pdf pdf_icon

BCW33LT1G

MOSTRAR MÁS

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