BCW68GLT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW68GLT1G
Código: DG
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 18 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BCW68GLT1G
BCW68GLT1G Datasheet (PDF)
bcw68glt1g.pdf
BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo
nsvbcw68glt1g.pdf
BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo
bcw68glt1.pdf
BCW68GLT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO -45 Vdc2EMITTERCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -800 mAdc3
bcw68glt1.pdf
FM120-M WILLASBCW68GLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch procesPNP Silicons design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
