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BCW68GLT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCW68GLT1G
   Código: DG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 18 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23
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BCW68GLT1G Datasheet (PDF)

 ..1. Size:65K  onsemi
 bcw68glt1g.pdf pdf_icon

BCW68GLT1G

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

 0.1. Size:65K  onsemi
 nsvbcw68glt1g.pdf pdf_icon

BCW68GLT1G

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

 5.1. Size:108K  onsemi
 bcw68glt1.pdf pdf_icon

BCW68GLT1G

BCW68GLT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO -45 Vdc2EMITTERCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -800 mAdc3

 5.2. Size:292K  willas
 bcw68glt1.pdf pdf_icon

BCW68GLT1G

FM120-M WILLASBCW68GLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch procesPNP Silicons design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BTNA14N3 | FA1L3Z-L38 | BC532 | RCA29C | DNLS350 | ZT1482

 

 
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