BF822W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETBF820W; BF822WNPN high-voltage transistors1997 Sep 03Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF820W; BF822WFEATURES PINNING Low current (max. 50 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitt

SMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specificationBF822WFeaturesLow current (max. 50 mA)High voltage (max. 250 V).1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage (open emitter) VCBO 250 VCollector-emitter voltage (open base) VCEO 250 VEmitter-base voltage (open collector) VE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BF820; BF822NPN high-voltage transistors1999 Apr 15Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationNPN high-voltage transistors BF820; BF822FEATURES PINNING Low current (max. 50 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 co

DISCRETE SEMICONDUCTORS DATA SHEETBF820; BF822NPN high-voltage transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetNPN high-voltage transistors BF820; BF822FEATURES PINNING Low current (max. 50 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony and profe

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BF820BF822SILICON EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSBF820 = 1VALL DIMENSIONS IN mmBF822 = 1XPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBF820 BF822Collectorbase voltage

BF8 20/ BF8 22TRANSISTOR (NPN) SOT-23 FEATURES Low current (max.50 mA) 1. BASE High voltage (max.300V) 2. EMITTER Telephony and professional communication equipment. 3. COLLECTOR MARKING: BF820:1V, BF822: 1X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage BF820 300 VCBO V BF822 250 Collector-Emitter Voltag

BF820/BF822 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment. MARKING: BF820:1V, BF822: 1X Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage BF820 300 V