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SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A Silicon Planar Epitaxial NPN Transistor Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Suitable For UHF Applications Up To 1.0GHz Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 20V VCEO Collector

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR92ALT1/D The RF Line NPN Silicon BFR92ALT1 High-Frequency Transistors Designed primarily for use in high gain, low noise, small signal UHF and microwave amplifiers constructed with thick and thin film circuits using surface mount components. T1 suffix indicates tape and reel packaging of 3,000 units per reel.

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR92AT NPN 5 GHz wideband transistor Product specification 2000 Mar 28 Supersedes data of 1999 Nov 02 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated 3 fpage in a plastic SOT416 (SC-75) package. Gold metallization ensures

DISCRETE SEMICONDUCTORS DATA SHEET BFR92A NPN 5 GHz wideband transistor 1997 Oct 29 Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A FEATURES DESCRIPTION High power gain NPN wideband transistor in a plastic page 3 SOT23 package. Low noise figure

DISCRETE SEMICONDUCTORS DATA SHEET BFR92AW NPN 5 GHz wideband transistor 1995 Sep 18 Product specification Supersedes data of October 1992 File under discrete semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION handbook, 2 columns 3 High power gain Silicon NPN transistor encapsulated in a plastic SOT323

BFR92A NPN 5 GHz wideband transistor Rev. 04 2 March 2009 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http

INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR92A DESCRIPTION Low Noise and High Gain NF = 1.3 dB TYP. @V = 10 V, I = 7 mA, f = 1.0 GHz CE C High Power Gain S 2 = 11.5 dB TYP. 21e @V = 10 V, I = 20 mA, f = 1.0 GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at VHF, UH