BT3904 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

LJ2015-423DG3904(BT3904) NPN P T =25 225 mWCM AI 200 mACMT 150 jmT -55~150 stgV I =0.1mA 60 V(BR)CBO CBV I =10mA 40 V(BR)CEO CEV I =0.1mA 6.0 V(BR)EBO EB I V =60V 0.1 ACBO CBV

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3904LT1/DGeneral Purpose TransistorMMBT3904LT1NPN SiliconCOLLECTOR Motorola Preferred Device31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCASE 31808, STYLE 6CollectorEmitter Voltage VCEO 40 VdcSOT23 (TO236AB)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3904LT1/DGeneral Purpose TransistorMMBT3904LT1NPN SiliconCOLLECTOR Motorola Preferred Device31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCASE 31808, STYLE 6CollectorEmitter Voltage VCEO 40 VdcSOT23 (TO236AB)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VE

PMBT3904M40 V, 200 mA NPN switching transistorRev. 01 21 July 2009 Product data sheetBOTTOM VIEW1. Product profile1.1 General descriptionNPN single switching transistor in a SOT883 (SC-101) leadless ultra smallSurface-Mounted Device (SMD) plastic package.PNP complement: PMBT3906M.1.2 Features Single general-purpose switching transistor Board-space reduction Ultra sma

PMBT3904YS40 V, 200 mA NPN/NPN general-purpose double transistorRev. 01 12 May 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose double transistor in a SOT363 (SC-88) very smallSurface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP Packagecomplement complement configurationNXP JEITA

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT3904NPN switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN switching transistor MMBT3904FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Telephony and professional communication

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT3904NPN switching transistor1999 Apr 27Product specificationSupersedes data of 1997 May 20Philips Semiconductors Product specificationNPN switching transistor PMBT3904FEATURESPINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Tel

DISCRETE SEMICONDUCTORS DATA SHEETPMBT3904NPN switching transistorProduct data sheet 2004 Jan 12Supersedes data of 1999 Apr 27 NXP Semiconductors Product data sheetNPN switching transistor PMBT3904FEATURES QUICK REFERENCE DATA Collector current capability IC = 200 mASYMBOL PARAMETER MAX. UNIT Collector-emitter voltage VCEO = 40 V.VCEO collector-emitter voltage 40

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D302PMBT3904DNPN switching double transistorProduct specification 1999 Dec 15Philips Semiconductors Product specificationNPN switching double transistor PMBT3904DFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V)1, 4 emitter TR1; TR2 Reduces number of components and board space.

PMBT3904VS40 V, 200 mA NPN/NPN switching transistorRev. 01 8 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double switching transistor in a SOT666 ultra small and flat leadSurface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNPcomplement complementNXP JEITAPMBT3904VS SOT666 - PMBT3906VS PM

MMBT3904SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingMMBT3904 34 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE ISMMBT3906APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTA

TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904 Audio Frequency General Purpose Amplifier Applications High voltage and high current : V = 50 V, I = 150 mA (max) CEO C Complementary to TMBT3906 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V 1. Base 2.

February 2008MMBT3904TNPN Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B Suitable for general switching & amplificationMarking : A04 Well suited for portable application SOT-523F As complementary type, PNP MMBT3906T is recommended Absolute Maximum Ratings Ta = 25C unless o

2N3904 MMBT3904 PZT3904CCEECC TO-92BBSOT-23 BESOT-223Mark: 1ANPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage

February 2008MMBT3904SLCNPN Epitaxial Silicon TransistorFeatures General purpose amplifier transistor.E Ultra small surface mount package for all types(max 0.43mm tall)B Suitable for general switching & amplification Well suited for portable applicationMarking : AA SOT-923F As complementary type, PNP MMBT3906SL is recommended Pb freeAbsolute Maxim

MMBT3904KNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking31AK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mW

PMBT3904M40 V, 200 mA NPN switching transistorRev. 01 21 July 2009 Product data sheetBOTTOM VIEW1. Product profile1.1 General descriptionNPN single switching transistor in a SOT883 (SC-101) leadless ultra smallSurface-Mounted Device (SMD) plastic package.PNP complement: PMBT3906M.1.2 Features Single general-purpose switching transistor Board-space reduction Ultra sma

PMBT3904QA40 V, 200 mA NPN switching transistor29 August 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-MountedDevice (SMD) plastic package with visible and solderable side pads.2. Features and benefits Leadless ultra small SMD plastic package Low package height of 0.37 mm Suitable for Auto

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMBT3904YS40 V, 200 mA NPN/NPN general-purpose double transistorRev. 01 12 May 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN general-purpose double transistor in a SOT363 (SC-88) very smallSurface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNP Packagecomplement complement configurationNXP JEITA

PMBT390440 V, 200 mA NPN switching transistor5 November 2020 Product data sheet1. General descriptionNPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.PNP complement: PMBT39062. Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO = 40 V3. Applications General switching and amp

PMBT3904MB40 V, 200 mA NPN switching transistorRev. 1 7 March 2012 Product data sheet1. Product profile1.1 General descriptionNPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.PNP complement: PMBT3906MB.1.2 Features and benefits Single general-purpose switching transistor AEC-Q101 qualified Ultra sma

PMBT3904RA40 V, 200 mA double NPN switching transistor13 September 2018 Product data sheet1. General descriptionDouble NPN switching transistor in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package.2. Features and benefits Leadless ultra small SMD plastic package Reduces component count Reduces pick and place costs Low packag

PMBT3904VS40 V, 200 mA NPN/NPN switching transistorRev. 01 8 July 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double switching transistor in a SOT666 ultra small and flat leadSurface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP/PNP NPN/PNPcomplement complementNXP JEITAPMBT3904VS SOT666 - PMBT3906VS PM

NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0

NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0

SMBT 3904SNPN Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA5 Low collector-emitter saturation voltage6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type: SMBT 3906S (PNP)32VPS056041Type Marking Ordering Code Pin Configuration PackageSMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B

SMBT 3904PNNPN Silicon Switching Transistor ArrayPreliminary data4 High current gain5 Low collector-emitter saturation voltage6 Two (galvanic) internal isolated NPN/PNP Transistors in one package32VPS056041PIN ConfigurationType Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = CSMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C

CMBT3904E NPNCMBT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS(NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged

CMBT3904E NPNCMBT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS(NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged

MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Type Available (MMBT3906) Case Material: Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant

MMBT3904FA40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 40V Case: X2-DFN0806-3 IC = 200mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Le

MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > 40V Case Material: Molded Plastic, Green Molding Compound. IC = 200mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint,

MMBT3904FZ 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 40V Case: X2-DFN0606-3 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level

MMBT3904T 60V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = 200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:

MMBT3904T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT3906T) CDim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22TOP VIEW B C "Green" Device (Note 3 and 4) B 0.75 0.85 0.80B EC 1.45 1.75 1.60Mechanical Data

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant)

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S / U: For orientation in reel see package information below Pb-free

SMBT3904...PNNPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101SMBT3904PNSMBT3904UPNC1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA07177Type Marking Pin Configuration Package

MMBT3904Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -5

MMBT3904HE3Features Halogen Free. "Green" Device (Note 1) AEC-Q101 Qualified Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability RatingGeneral Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS AmplifierCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature R

MMBT3904TFeatures Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT3904Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 350mWatts of Power Dissipation and 200mA Ic.NPN General Operating and Storage Junction Temperatures: -55 to 150 Surface Mount SOT-23 Package Purpose Amplifier Lead Free Finish/RoHS Compl

MMBT3904L3Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range:

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMBT3904TCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features150mW Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Operatingand Storage Junction Temperatures: -55 to 150 Purpose Amplifier Epoxy meets

MMBT3904TT1G,SMMBT3904TT1GGeneral Purpose TransistorsNPN SiliconThis transistor is designed for general purpose amplifierwww.onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEFeaturesAMPLIFIER TRANSISTORS S Prefix for Automotive and Other Applications Requiring UniqueSURFACE MOUNT

MMBT3904WT1G, NPN,SMMBT3904WT1G, NPN,MMBT3906WT1G, PNP,SMMBT3906WT1G, PNPGeneral Purposewww.onsemi.comTransistorsNPN and PNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package which1is designed for low power surface mount applications.BASEFeatures2 S Prefix for Automotive an

MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emitte

MMBT3904WT1, NPNMMBT3906WT1, PNPGeneral PurposeTransistorsNPN and PNP Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierCOLLECTORapplications. They are housed in the SOT-323/SC-70 package which3is designed for low power surface mount applications.Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASEComplian

MMBT3904WT1, NPN,SMMBT3904WT1, NPN,MMBT3906WT1, PNPGeneral PurposeTransistorshttp://onsemi.comNPN and PNP SiliconCOLLECTORThese transistors are designed for general purpose amplifier3applications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.1BASEFeatures AEC-Q101 Qualified and PPAP Capable2 S Pref

MBT3904DW1T1G,MBT3904DW2T1G,SMBT3904DW1T1GDual General PurposeTransistorshttp://onsemi.comThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It isMARKINGdesigned for general purpose amplifier applications and is housed inDIAGRAMthe SOT-363 six-leaded surface mount package. By putting two6discrete devices in one

MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emi

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

MMBT3904TT1G,SMMBT3904TT1GGeneral Purpose TransistorsNPN SiliconThis transistor is designed for general purpose amplifierhttp://onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEFeaturesAMPLIFIER TRANSISTORS AEC-Q101 Qualified and PPAP CapableSURFACE MOUNT S Prefix for Automo

MMBT3904LT1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO 40 VdcBASECollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 Vdc 2EMITTERCollector Current - Continuous IC 200 mAdcColl

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

MBT3904DW1T1G,MBT3904DW2T1GDual General PurposeTransistorsThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It ishttp://onsemi.comdesigned for general purpose amplifier applications and is housed inthe SOT-363 six-leaded surface mount package. By putting two MARKINGDIAGRAMdiscrete devices in one package, this device

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de

MMBT3904TT1General Purpose TransistorsNPN SiliconThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.http://onsemi.comFeaturesGENERAL PURPOSE Pb-Free Package is AvailableAMPLIFIER TRANSISTORSSURFACE MOUNTMAXIMUM RATINGS (TA = 25C)COLLECTORRating

UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT3904G-AE3-R SOT-23 E B C Tape ReelMMBT3904G-AL3-R SOT-323 E B C Tape

SBT3904UNPN Silicon TransistorDescriptions PIN Connection Small signal application Switching application Features 3 Low VCE(SAT) : 0.3V max @ IC=50 1 High speed switching : tf=50 max @ IC=10 2 Complementary pair with SBT3906U SOT-323 Ordering Information Type NO. Marking Package Code 1A SBT3904U SOT-323 D

SBT3904 NPN Silicon Transistor Descriptions General small signal application Switching application COLLECTOR33Features 1 Low collector saturation voltage BASE Collector output capacitance Complementary pair with SBT3906 2EMITTEROrdering Information SOT-23 Part Number Marking Package 1A SBT3904 SOT-23 * D

SBT3904UFNPN Silicon TransistorDescriptions PIN Connection Small signal application Switching application 3 Features Low VCE(SAT) : 0.3V max @ IC=50 1 High speed switching : tf=50 max @ IC=10 2 Complementary pair with SBT3906UF SOT-323F Ordering Information Type NO. Marking Package Code 1A SBT3904UF SOT-323F D

MMBT3904EFNPN Silicon TransistorDescriptions PIN Connection Small signal application Switching application 3 Features Low collector saturation voltage 1 Low collector output capacitance 2 Complementary pair with MMBT3906EF SOT-523F Ordering Information Type NO. Marking Package Code Z MMBT3904EF SOT-523F Device Code

SBT3904FNPN Silicon TransistorDescriptions PIN Connection General small signal application Switching application 3 Features Low collector saturation voltage 1 Collector output capacitance Complementary pair with SBT3906F 2 SOT-23F Ordering Information Type NO. Marking Package Code 1A SBT3904F SOT-23F Device Code

MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION AL General switching and amplification. 33Top View C B 11 22K EPACKAGING DIMENSION

MMBT3904FWNPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductFEATURESSOT-523A Epitaxial Planar Die ConstructionDim Min MaxL Complementary PNP Type AvailableA 1.500 1.700(MMBT3906FW)B 0.750 0.850 Ideal for Medium Power Amplification andSTop ViewBC 0.700 0.900SwitchingD 0.250 0.350COLLECTORV GG 0.900 1.1003 3H 0.0

MMBT3904Z 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-923 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 2 PACKAGING DIMENSION Millimet

MMBT3904T NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking ShippingMMBT3904T MA 3000/Tape&ReelMillimeter Millimete

MMBT3904WNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-323(SC-70) Epitaxial Planar Die ConstructionDim Min MaxA Complementary PNP Type AvailableLA 1.800 2.200(MMBT3906W)B 1.150 1.3503 Ideal for Medium Power Amplification andS C 0.800 1.000Top ViewBSwitching

MMBT3904ZW 200 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free WBFBP-03E FEATURES Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. MARKING Millimeter Millimeter REF. REF. Min. Max. Min. Max.

MMBT3904Taiwan SemiconductorSmall Signal Product300mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface device type mounting- Moisture sensitivity level 1- Matte Tin (Sn) lead finish with Nickel (Ni) underplate- Pb free version and RoHS compliant- Packing code with suffix "G" means green compound (halogen-free) SOT-23MECHANICAL DATA- Case

MMBT3904LTaiwan SemiconductorSmall Signal Product300mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface device type mounting- Moisture sensitivity level 1- Matte Tin (Sn) lead finish with Nickel (Ni) underplate- Pb free version and RoHS compliant- Packing code with suffix "G" means green compound (halogen-free) SOT-23MECHANICAL DATA- Cas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors SOT-723 MMBT3904M TRANSISTOR (NPN) FEATURE Complementary to MMBT3906M Small Package MARKING: 1N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted ) 3. COLLECTORSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT3906T Small Package MARKING:1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER V Collector-Emitter Voltage 40 V CEO

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconHalogen-free typeLead free productCOLLECTOR33BASE112MMBT3904GH2EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSChar

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productCOLLECTOR33BASE11MMBT3904WG22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT3904WGH22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCh

MMBT3904TRANSISTOR(NPN)SOT-23 FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction (3)C MARKING: 1AM 1AM(1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curre

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3904( MMBT3904)MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit

MMBT3904 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VDimensions in inches and (millimeters)VCEO Collector-Emitter Vo

MMBT3904LT1 NPN SWITCHING TRANSISTOR1. BASE 2. EMITTER3. COLLECTORFEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min MaxA 2.70 3.10K B(MMBT3906). B 1.10 1.50C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 TypicalJDE 0.35 0.48 Collector-emitter Voltage VCEO=40V. GG 1.80 2.00H 0.02 0.1H

MMBT3904COLLECTOR3General Purpose Transistor3NPN Silicon11BASE22SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (

MMBT3904TGeneral Purpose NPN SiliconTransistor3COLLECTOR3P b Lead(Pb)-Free121BASESC-892SOT-523FEMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max Unit(1)Total

MMBT3904WCOLLECTOR3General Purpose Transistor3NPN Silicon1BASE122EMITTERSOT-323(SC-70)Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation TA=

MMBT3904ENPN General Purpose Transistor3211The MMBT3904E device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device.SOT-1123It is designed for general purpose amplifier applicationsand is housed in the SOT-1123 surface mount package.COLLECTORThis device is ideal for low-power surface mount applications3where board space is at a premium.FE

MBT3904DWDual General Purpose Transistor2 13654NPN+NPN Silicon12345 6SOT-363(SC-88)NPN+NPNMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipa

FM120-M WILLASMMBT3904DW1T1THRUDual General Purpose TransistorFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim

FM120-M WILLASMMBT3904LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.RoHS product for packing code suffix "G", SOD-123H Low profile surfa

FM120-M WILLASTHRUMMBT3904TT1General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesNPN ocess de Batch prSiliconsign, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in

FM120-MWILLAS MMBT3904SLT1THRU SOT-923 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outline TRANSISTOR (NPN) Features FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HSOT923 Lo

Spec. No. : HE6814HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBT3904NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT3904 is designed for general purpose switching amplifier applications.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................................

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.2 W (Tamb=25) 1. 3 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range Unit: mm TJ, Ts

SOT-23 Plastic-Encapsulate TransistorsFEATURESSOT-23 As complementary type, the PNP transistorMMBT3906 is Recommended Epitaxial planar die constructionMARKING:1AMMARKING:1AMMARKING:1AMMARKING:1AM1 BASEMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS2 EMITTERSymbol Parameter Value UnitsSymbol Parameter Va

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES Complimentary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-

MMBT3904 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low current, Low voltage / Applications General purpose amplifier and switching. / Equivalent Circuit

MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dissipation Ptot 350 mWOJunction Temperature Tj 150 C OStorag

LMBT3904N3T5GS-LMBT3904N3T5GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT883 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice Mar

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURESLMBT3904LT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.S-LMBT3904LT1G2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1013 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1GRoHS requirements.S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATIONDevice Marking

LESHAN RADIO COMPANY, LTD.General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes aLMBT3904LT1GPb-Free Lead FinishS-LMBT3904LT1G We declare that the material of product compliance with RoHSrequirements. S- Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable

LMBT3904LT1GS-LMBT3904LT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1GRoHS requirements.S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATIONDevice Marking

LMBT3904DW1T1GS-LMBT3904DW1T1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VSimplifi

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURESLMBT3904W T1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.S-LMBT3904W T1G2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1013 Qualified and PPAP Capable.1DEVICE MARKING AND RESISTOR

LMBT3904WT1GS-LMBT3904WT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic

LESHAN RADIO COMPANY, LTD.Dual General Purpose Transistors The LMBT3904DW1T1G device is a spinoff of our popularLMBT3904DW1T1GSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT363S-LMBT3904DW1T1Gsixleaded surface mount package. By putting two discrete devicesin one package , this device is ideal fo

Product specificationKMBT3904(MMBT3904)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesEpitaxial planar die construction12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6VColl

MMBT3904LTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish3Maximum Ratings1Rating Symbol Value Unit2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcSOT23Emitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 200 mAdc3COLLECTORThermal Charact

SMD Type TransistorsNPN TransistorsMMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

SMD Type TransistorsNPN TransistorsMMBT3904 (KMBT3904)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Complementary to MMBT39061 2 Marking:1AM+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 V

SMD Type TransistorsNPN TransistorsMMBT3904T (KMBT3904T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Small Package2 1 Complementary to MMBT3906T30.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec

SMD Type TransistorsNPN TransistorsMMBT3904T (KMBT3904T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Small Package2 1 Complementary to MMBT3906T30.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec

SMD Type TransistorsNPN TransistorsMMBT3904W Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=40V Complementary to MMBT3906W1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Colle

SMD Type TransistorsNPN TransistorsKMBT3904(MMBT3904)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesEpitaxial planar die construction12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 VEmitter - Base Volta

SMD Type TransistorsNPN Transistors(KMBT3904-D)MMBT3904-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Complementary to MMBT3906-D1 2 Marking:1AM+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VC

SMD Type TransistorsNPN TransistorsMMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

MMBT3904NPN GENERAL PURPOSE SWITCHING TRANSISTORUnitinch(mm)225 mWattVOLTAGE 40 Volt POWER SOT-23FEATURES NPN epitaxial silicon, planar design0.120(3.04) Collector-emitter voltage VCE = 40V 0.110(2.80) Collector current IC = 200mA Transition frequency fT>300MHz @ IC=10mAdc,VCE=20Vdc,f=100MHz Lead free in compliance with EU RoHS 2.0 0.056(1.40) Gr

MMBT3904FN3NPN GENERAL PURPOSE SWITCHING TRANSISTORUnitinch(mm)DFN 3LPOWERVOLTAGE 40 Volt 250 mWatt0.042(1.05)FEATURES 0.037(0.95) NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)M

MMBT3904WNPN GENERAL PURPOSE SWITCHING TRANSISTORUnitinch(mm)SOT-323150 mWattVOLTAGE 40 Volt POWERFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V0.087(2.20) Collector current IC = 200mA0.070(1.80) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.054(1.35)0.045(1.15)MEC

General Purpose TransistorMMBT3904-G (NPN)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction0.120 (3.04)0.110 (2.80) -As complementary type, the PNP3transistor MMBT3904-G is recommended0.055 (1.40)0.047 (1.20)1 20.080 (2.04)0.070 (1.78)Collector0.007 (0.18)3 0.003 (0.08)0.044 (1.11)0.104 (2.64)0.035 (0.89)0.083 (2.10)1Base0.004 (0.100)

General Purpose TransistorMMBT3904-HF (NPN)RoHS DeviceHalogen FreeSOT-23Features0.118(3.00)0.110(2.80) -Epitaxial planar die construction3 -As complementary type, the PNP0.055(1.40)0.047(1.20)transistor MMBT3904-HF is recommended1 20.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.089(2.25)1Base0.004(0.10

DC COMPONENTS CO., LTD.DMBT3904DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose switching and amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65) 3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85

Product specification NPN SWITCHING TRANSISTOR MMBT3904 FEATURES Epitaxial planar die construction. Pb Complementary PNP type available Lead-free (MMBT3906). Collector Current Capability I =200mA. CM Collector-emitter Voltage V =40V. CEO MSL 1 APPLICATIONS SOT-23 General switching and amplification ORDERING INFORMATION Type No. Marking Pac

GSTMMBT3904 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT3904F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT3904F SOT-23 1AMOrdering Information GS P/NGSTMMBT3904 FPb Free Co

KBT3904C NPN Silicon Transistor 2018.09.07 2018.09.07 2018.09.07 2018.09.07 1 000 2018.03.02 2 TAPING 001 2018.09.07 AUK Dalian 1 KBT3904C NPN Silicon Transistor De

MMBT3904NPN Switching TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Rating UnitVCEO 40 VdcCollector-Emitter VoltageVCBO 60 VdcCollector-Base VoltageV 6.0 VdcEmitter-Base Voltage EBOIc 200 mAdcCollector Current-ContinuousTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARACTERIST

MMBT3904MNPN General Purpose Amplifier Capable of 100m Watts of Power Dissipation and 200mA Ic Operating and Storage Junction Temperatures: -55 to 150 Small Outline Surface Mount Package RoHS compliant / Green EMCDevice Marking CodeMMBT3904M 1NMaximum Ratings Ta = 25 unless otherwise notedSymbol Parameter Value UnitsVCBOCollector-Base Voltage 60

MMBT3904T NPN Transistor32 Features1.Base Small Package2.Emitter3.Collector Complementary to MMBT3906T1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 200 mA Collecto

MMBT3904WNPN Silicon Epitaxial Planar Transistorfor switching and amplifier applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperature Range

RUMWUMW MMBT3904UMW MMBT3904UMW MMBT3904UMW MMBT3904UMW MMBT3904NPN Transistors Features SOT23 Small Package Complementary to MMBT3906TMARKING1. BASE 2. EMITTER 1AM3. COLLECTOR Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60Collector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6

MMBT3904NPN Plastic-Encapsulate TransistorFeatures Pin ConfigurationsV CE = 40V3 COLLECTORI C = 0.2A f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE2 EMITTERGeneral Description As complementary type the PNP transistorMMBT3906 is recommended Epitaxial planar die constructio SOT-23 Plastic Package.Absolute Maximum Ratings @T =25 unless otherwise noted

MMBT3904 TRANSISTOR (NPN)FEATURES Complementary to MMBT3906MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT23Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW RJA Thermal Resistance From Junction To Ambient 625 /WT

NPN SWITCHING TRANSISTOR Formosa MSMMBT3904 TRANSISTOR (NPN) FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT3906). Collector Current Capability Ic=200mA. Collector-emitter Voltage VCEO=40V. APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM

MMBT3904SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Complementary to MMBT3906 Marking: 1AMSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V CEBOI Collector Current 200 mA CP Collector Power Dissipation 200 mW CRJA Thermal Resistance From Junction

MMBT3904NPN SWITCHING TRANSISTORFEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT3906). SOT-23 Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 1 APPLICATIONS General switching and amplification ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RA

MMBT3904TRANSISTOR(NPN)FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction MARKING:1AMSOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector

www.msksemi.comMMBT3904T-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)3MMBT3904T-MS1. BASEFEATURES 2. EMITTER1 Complementary to MMBT3906T3. COLLECTOR2 Small PackageSOT-523 MARKING: 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 40 V

www.msksemi.comMMBT3904-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT3906-MSMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE2. EMITTERSOT23 MARKING: 1AM3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta

MMBT3904GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial Planar Transistor For Switching And Amplifier Applications Collector-emitter Voltage VCE=40V Collector Current IC=200mA MECHANICAL DATA C E Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUM

MMBT3904 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 200 mA CPower Dissipation P

Jingdao Microelectronics co.LTD MMBT3904MMBT3904SOT-23NPN TRANSISTOR3FEATURES Complementary to MMBT3906 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 60 V2.EMITTERCollectorEmitter Voltage VCEO 40 V3.COLLECTOREmitterBase Voltage VEB

MMBT3904T NPN Plastic-Encapsulate Transistors FEATURES Complementary to MMBT3906T Small Package MARKING:MAMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOSOT523 V Collector-Emitter Voltage 40 V CEO 1. BASE V Emitter-Base Voltage 6 V EBO2. EMITTER I Collector Current 200 mA C3. COLL

MMBT3904KSOT-23 Plastic-Encapsulate Transistors TRANSISTOR(NPN)Features Power Dissipation of 200mW High Stability and High Reliability Mechanical Data Marking: 1AM SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Par

MMBT3904DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features Low current, Low voltage.Applications General purpose amplifier and switching. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMBT3904DW Absolute Maximum Ratings(Ta

TAK CHEONG SEMICONDUCTORSOT-523 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 2 VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA 1 Power Dissipation PD 200

TAK CHEONG SEMICONDUCTOR SOT-883 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units 3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 2 IC Collector Current 200 mA 1 Power Dissipation PD

Integrated inOVP&OCP productsproviderMMBT3904SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Sm

MMBT3904 SOT-23 NPN Transistors321.Base Features2.Emitter1 3.Collector Complementary to MMBT3906 Marking:1AM Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6 VCollector Current - Continuous IC 0.2 ACollector Power Dis

MMBT3904TRANSISTORNPNTRANSISTORNPNTRANSISTORNPNTRANSISTORNPNTRANSISTORNPNFEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and SwitchingSOT-23 MARKING: 1AM 1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Par

MMBT3904TGeneral Purpose Transistor NPN SiliconSurface Mount Plastic PackageFeatures Simplifies Circuit Design1. Base RoHS Compliant2. Emitter Green EMC3. CollectorMarking1NMaximum Ratings (T =25C unless otherwise noted)aSymbol Parameter Value UnitV Collector Base Voltage 60 VCBOV Collector Emitter Voltage 40 VCEOV Emitter Base Voltage 6 VEBO

MMBT3904 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT3906 Collector Current: Ic=200mAMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 200 mACollector P

MMBT3904 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack

MMBT3904AO3400SI2305MMBT3904 TRANSISTOR (NPN)FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING: 1AM 1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Colle

MMBT3904MMMBT3904MMMBT3904MSOT-723 MMBT3904M TRANSISTOR (NPN)FEATURE Complementary to MMBT3906M Small Package1. BASEMARKING: 1N 2. EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuou

MMBT3904TMMBT3904TMMBT3904TTRANSISTOR(NPN)MMBT39 0 4TFEATURES SOT523 Complementary to MMBT3906T Small PackageMAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE2. EMITTERSymbol Parameter Value Unit 3. COLLECTORV Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current 200 mA CPC C

MMBT3904WMMBT3904WMMBT3904WMMBT3904WTRANSISTOR(NPN)MMBT39 0 4Wfor switching and amplifier applicationsSOT323 31. BASE 12. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power

SHANGHAI June 2006 MICROELECTRONCS CO., LTD. SEBT3904U NPN switching transistor Features Low current (max. 100 mA). Low voltage (max. 40 V). Applications Telephony and professional communication equipment. DESCRIPTION NPN switching transistor in a SOT323 plastic package PNP complement: SEBT3906U. Absolute maximum ratings (Ta=25) CONDITIOPar

RoHS COMPLIANT MMBT3904 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:1AM Off Characteristics Item Symbol Unit Conditions ValueCollector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 40 Collector-Base Voltage VCBO V IC=10uAdc, IE=0 60 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0 Collec

RoHS COMPLIANT MMBT3904T NPN General Purpose Amplifier Features Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion Epoxy meets UL-94 V-0 flammability rating, halogen-free Mechanical Data ackage: SOT-523 P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: 1N Maximum R

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dis

MMBT3904 MMBT3904 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT3906 Power Dissipation of 200mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT3904 1AM . Maximum R

MMBT3904M MMBT3904M NPN General Purpose Transistor General description NPN General Purpose Transistor FEATURES SOT-723 General Purpose Transistors. VCEO 40V Ic 200mA PC 100mW Complementary to MMBT3906M Small Outline Surface Mount Package. RoHS Compliant / Green EMC. Type MMBT3904M Marking 1N Absolute Maximum Ratings(Ta=25) Para

MMBT3904T MMBT3904T SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.002g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

MMBT3904W MMBT3904W SOT-323 Silicon General Purpose Transistor (NPN) General description SOT-323 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

MMBT3904C MMBT3904C SOT-883 Silicon General Purpose Transistor (NPN) General description SOT-883 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

TRANSISTOR (NPN)FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1BASE 2EMITTER 3COLLECTOR MARKING: 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6

SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT3906T Small Package MARKING:1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR V Emitter-Base Voltage 6 V EBOI Colle

MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 1EOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStor

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT3904MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-Collector-Base VoltageVCBO 40 Vdc-Emitter-Base VoltageVEBO 6.0 Vdc-Co

MMBT3904NPN GENERAL PURPOSE SWITCHING TRANSISTOR40Volts POWER 225mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.2A.ansition frequency fT>300MHz @ TrIC=10mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: So

MMBT3904BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT3906 Surface Mount deviceMECHANICAL DATA SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 60 VCBOCollec

NPN MMBT3904MMBT3904 TRANSISTOR (NPN)FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1BASE 2EMITTER 3COLLECTOR MARKING: 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta

MMBT3904SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Vol

HMBT3904MOTNPN-TRANSISTORNPN NPN Switching Transistor SMDHMBT3904HMBT3904LT1Excellent hFE linearityNPN, BECLow noiseGeneral Purpose TransistorsTransistor Polarity: NPNTransistor pinout: BEC SOT-23 Package MMBT3904MMBT3904LT1Marking Code: 1AMHMMBT3904LT1hFE:

YFSEMI ELECTRONSOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Voltage 6 V IC Coll

MMBT3904Silicon Epitaxial Planar Transistor(NPN)CEFeaturesHigh Collector CurrentBComplementary To MMBT3906SOT-23Excel lent HFE Li nea r l tyAbsolute Maximum Ratings*unless otherwise notedTA = 25CParameter Value UnitsSymbolV Collector-Base Voltage 60CBO VVCEO 40 VCollector-Emitter VoltageVEBO Emitter-Base Voltage6 VICmACollector Current -Continuo

HMBT3904NPN-TRANSISTORNPN, 200mA, 40V NPN NPN Switching Transistor SMDHMBT3904HMBT3904LT1Excellent hFE linearityNPN, BECLow noiseGeneral Purpose TransistorsComplementary to HMBT3906Transistor Polarity: NPNTransistor pinout: BEC MMBT3904

isc Silicon NPN Transistor MMBT3904DESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTelephony and professional communication equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 40 VC

isc Silicon NPN RF Transistor LMBT3904LT1GDESCRIPTIONLow Noise FigureNF = 5 dB(MAX)@V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0kCE C SMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiersand linear broadband amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

MMBT3904NPN SWITCHING TRANSISTOR FEATURES Pb Epitaxial planar die construction.Lead-free Complementary PNP type available(MMBT3906). Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 3APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RATING @ Ta=