BT3904. Аналоги и основные параметры
Наименование производителя: BT3904
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 300 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT23
Аналоги (замена) для BT3904
- подборⓘ биполярного транзистора по параметрам
BT3904 даташит
bt3904.pdf
LJ2015-42 3DG3904(BT3904) NPN P T =25 225 mW CM A I 200 mA CM T 150 jm T -55 150 stg V I =0.1mA 60 V (BR)CBO CB V I =10mA 40 V (BR)CEO CE V I =0.1mA 6.0 V (BR)EBO EB I V =60V 0.1 A CBO CB V
mmbt3904w mmbt3906wt1 mmbt3904 06.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO
mmbt3904wt1 mmbt3906wt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO
mmbt3904lt1rev1d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3904LT1/D General Purpose Transistor MMBT3904LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 6 Collector Emitter Voltage VCEO 40 Vdc SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VE
mmbt3904l.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3904LT1/D General Purpose Transistor MMBT3904LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 6 Collector Emitter Voltage VCEO 40 Vdc SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VE
pmbt3904m.pdf
PMBT3904M 40 V, 200 mA NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package. PNP complement PMBT3906M. 1.2 Features Single general-purpose switching transistor Board-space reduction Ultra sma
pmbt3904ys.pdf
PMBT3904YS 40 V, 200 mA NPN/NPN general-purpose double transistor Rev. 01 12 May 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP Package complement complement configuration NXP JEITA
mmbt3904 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony and professional communication
pmbt3904 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT3904 NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 May 20 Philips Semiconductors Product specification NPN switching transistor PMBT3904 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Tel
pmbt3904.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBT3904 NPN switching transistor Product data sheet 2004 Jan 12 Supersedes data of 1999 Apr 27 NXP Semiconductors Product data sheet NPN switching transistor PMBT3904 FEATURES QUICK REFERENCE DATA Collector current capability IC = 200 mA SYMBOL PARAMETER MAX. UNIT Collector-emitter voltage VCEO = 40 V. VCEO collector-emitter voltage 40
pmbt3904d 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMBT3904D NPN switching double transistor Product specification 1999 Dec 15 Philips Semiconductors Product specification NPN switching double transistor PMBT3904D FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 40 V) 1, 4 emitter TR1; TR2 Reduces number of components and board space.
pmbt3904vs.pdf
PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA PMBT3904VS SOT666 - PMBT3906VS PM
mmbt3904.pdf
MMBT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT3904 34 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT3906 APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTA
tmbt3904.pdf
TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type TMBT3904 Audio Frequency General Purpose Amplifier Applications High voltage and high current V = 50 V, I = 150 mA (max) CEO C Complementary to TMBT3906 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V 1. Base 2.
mmbt3904t.pdf
February 2008 MMBT3904T NPN Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B Suitable for general switching & amplification Marking A04 Well suited for portable application SOT-523F As complementary type, PNP MMBT3906T is recommended Absolute Maximum Ratings Ta = 25 C unless o
2n3904 mmbt3904 pzt3904.pdf
2N3904 MMBT3904 PZT3904 C C E E C C TO-92 B B SOT-23 B E SOT-223 Mark 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage
mmbt3904sl.pdf
February 2008 MMBT3904SL C NPN Epitaxial Silicon Transistor Features General purpose amplifier transistor. E Ultra small surface mount package for all types(max 0.43mm tall) B Suitable for general switching & amplification Well suited for portable application Marking AA SOT-923F As complementary type, PNP MMBT3906SL is recommended Pb free Absolute Maxim
mmbt3904k.pdf
MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW
pmbt3904m.pdf
PMBT3904M 40 V, 200 mA NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package. PNP complement PMBT3906M. 1.2 Features Single general-purpose switching transistor Board-space reduction Ultra sma
pmbt3904qa.pdf
PMBT3904QA 40 V, 200 mA NPN switching transistor 29 August 2018 Product data sheet 1. General description NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits Leadless ultra small SMD plastic package Low package height of 0.37 mm Suitable for Auto
mmbt3904.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pmbt3904ys.pdf
PMBT3904YS 40 V, 200 mA NPN/NPN general-purpose double transistor Rev. 01 12 May 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP Package complement complement configuration NXP JEITA
pmbt3904.pdf
PMBT3904 40 V, 200 mA NPN switching transistor 5 November 2020 Product data sheet 1. General description NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement PMBT3906 2. Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO = 40 V 3. Applications General switching and amp
pmbt3904mb.pdf
PMBT3904MB 40 V, 200 mA NPN switching transistor Rev. 1 7 March 2012 Product data sheet 1. Product profile 1.1 General description NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement PMBT3906MB. 1.2 Features and benefits Single general-purpose switching transistor AEC-Q101 qualified Ultra sma
pmbt3904ra.pdf
PMBT3904RA 40 V, 200 mA double NPN switching transistor 13 September 2018 Product data sheet 1. General description Double NPN switching transistor in an ultra small DFN1412-6 (SOT1268) leadless Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Leadless ultra small SMD plastic package Reduces component count Reduces pick and place costs Low packag
pmbt3904vs.pdf
PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA PMBT3904VS SOT666 - PMBT3906VS PM
smbt3904 s1a sot23.pdf
NPN Silicon Switching Transistor SMBT 3904 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3906 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3904 s1A Q68000-A4416 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0
smbt3904.pdf
NPN Silicon Switching Transistor SMBT 3904 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3906 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3904 s1A Q68000-A4416 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0
smbt3904s s1a sot363.pdf
SMBT 3904S NPN Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3906S (PNP) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B
smbt3904pn s3p sot363.pdf
SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 High current gain 5 Low collector-emitter saturation voltage 6 Two (galvanic) internal isolated NPN/PNP Transistors in one package 3 2 VPS05604 1 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C SMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C
cmbt3904e cmbt3906e.pdf
CMBT3904E NPN CMBT3906E PNP www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS (NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged
cmbt3904e.pdf
CMBT3904E NPN CMBT3906E PNP www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS (NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged
mmbt3904.pdf
MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Type Available (MMBT3906) Case Material Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant
mmbt3904fa.pdf
MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 40V Case X2-DFN0806-3 IC = 200mA high Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity Le
mmbt3904lp.pdf
MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case X1-DFN1006-3 BVCEO > 40V Case Material Molded Plastic, Green Molding Compound. IC = 200mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 0.60mm2 Package Footprint,
mmbt3904fz.pdf
MMBT3904FZ 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 40V Case X2-DFN0606-3 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity Level
mmbt3904t.pdf
MMBT3904T 60V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = 200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals
mmbt3904t 2.pdf
MMBT3904T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT3906T) C Dim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22 TOP VIEW B C "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B E C 1.45 1.75 1.60 Mechanical Data
smbt3904 mmbt3904 smbt3904s.pdf
SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S Two (galvanic) internal isolated transistors with good matching in one package Complementary types SMBT3906... MMBT3906 SMBT3904S For orientation in reel see package information below Pb-free (RoHS compliant)
smbt3904series mmbt3904.pdf
SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U Two (galvanic) internal isolated transistors with good matching in one package Complementary types SMBT3906... MMBT3906 SMBT3904S / U For orientation in reel see package information below Pb-free
smbt3904pn smbt3904upn.pdf
SMBT3904...PN NPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type Marking Pin Configuration Package
mmbt3904.pdf
MMBT3904 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -5
mmbt3904he3.pdf
MMBT3904HE3 Features Halogen Free. "Green" Device (Note 1) AEC-Q101 Qualified Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability Rating General Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Amplifier Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature R
mmbt3904t.pdf
MMBT3904T Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -
mmbt3904 sot-23.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT3904 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 350mWatts of Power Dissipation and 200mA Ic. NPN General Operating and Storage Junction Temperatures -55 to 150 Surface Mount SOT-23 Package Purpose Amplifier Lead Free Finish/RoHS Compl
mmbt3904l3.pdf
MMBT3904L3 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range
mmbt3904t sot-523.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMBT3904T CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features 150mW Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Operatingand Storage Junction Temperatures -55 to 150 Purpose Amplifier Epoxy meets
mmbt3904tt1g smmbt3904tt1g.pdf
MMBT3904TT1G, SMMBT3904TT1G General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier www.onsemi.com applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. GENERAL PURPOSE Features AMPLIFIER TRANSISTORS S Prefix for Automotive and Other Applications Requiring Unique SURFACE MOUNT
mmbt3904wt1g smmbt3904wt1g mmbt3906wt1g smmbt3906wt1g.pdf
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose www.onsemi.com Transistors NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which 1 is designed for low power surface mount applications. BASE Features 2 S Prefix for Automotive an
mmbt3904l smmbt3904l.pdf
MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emitte
mmbt3904wt1 mmbt3906wt1.pdf
MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http //onsemi.com These transistors are designed for general purpose amplifier COLLECTOR applications. They are housed in the SOT-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Complian
mmbt3904wt1g mmbt3906wt1g.pdf
MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http //onsemi.com NPN and PNP Silicon COLLECTOR These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. 1 BASE Features AEC-Q101 Qualified and PPAP Capable 2 S Pref
smbt3904dw1t1g mbt3904dw.pdf
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G Dual General Purpose Transistors http //onsemi.com The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is MARKING designed for general purpose amplifier applications and is housed in DIAGRAM the SOT-363 six-leaded surface mount package. By putting two 6 discrete devices in one
mmbt3904lt1g.pdf
MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emi
2n3904bu 2n3904ta 2n3904tar 2n3904tf 2n3904tfr mmbt3904 pzt3904.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mmbt3904lt3g.pdf
MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emi
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de
mmbt3904tt1g.pdf
MMBT3904TT1G, SMMBT3904TT1G General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier http //onsemi.com applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. GENERAL PURPOSE Features AMPLIFIER TRANSISTORS AEC-Q101 Qualified and PPAP Capable SURFACE MOUNT S Prefix for Automo
mmbt3904lt1-d.pdf
MMBT3904LT1G General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 40 Vdc BASE Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc 2 EMITTER Collector Current - Continuous IC 200 mAdc Coll
nsvmbt3904dw1t3g.pdf
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de
mbt3904dw1-2.pdf
MBT3904DW1T1G, MBT3904DW2T1G Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is http //onsemi.com designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two MARKING DIAGRAM discrete devices in one package, this device
2n3904 mmbt3904 pzt3904.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mbt3904dw1t3g.pdf
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de
mmbt3904tt1.pdf
MMBT3904TT1 General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http //onsemi.com Features GENERAL PURPOSE Pb-Free Package is Available AMPLIFIER TRANSISTORS SURFACE MOUNT MAXIMUM RATINGS (TA = 25 C) COLLECTOR Rating
mmbt3904.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage VCEO=40V * Collector Dissipation PD(MAX)=350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT3904G-AE3-R SOT-23 E B C Tape Reel MMBT3904G-AL3-R SOT-323 E B C Tape
sbt3904u.pdf
SBT3904U NPN Silicon Transistor Descriptions PIN Connection Small signal application Switching application Features 3 Low VCE(SAT) 0.3V max @ IC=50 1 High speed switching tf=50 max @ IC=10 2 Complementary pair with SBT3906U SOT-323 Ordering Information Type NO. Marking Package Code 1A SBT3904U SOT-323 D
sbt3904.pdf
SBT3904 NPN Silicon Transistor Descriptions General small signal application Switching application COLLECTOR 3 3 Features 1 Low collector saturation voltage BASE Collector output capacitance Complementary pair with SBT3906 2 EMITTER Ordering Information SOT-23 Part Number Marking Package 1A SBT3904 SOT-23 * D
sbt3904uf.pdf
SBT3904UF NPN Silicon Transistor Descriptions PIN Connection Small signal application Switching application 3 Features Low VCE(SAT) 0.3V max @ IC=50 1 High speed switching tf=50 max @ IC=10 2 Complementary pair with SBT3906UF SOT-323F Ordering Information Type NO. Marking Package Code 1A SBT3904UF SOT-323F D
mmbt3904ef.pdf
MMBT3904EF NPN Silicon Transistor Descriptions PIN Connection Small signal application Switching application 3 Features Low collector saturation voltage 1 Low collector output capacitance 2 Complementary pair with MMBT3906EF SOT-523F Ordering Information Type NO. Marking Package Code Z MMBT3904EF SOT-523F Device Code
sbt3904f.pdf
SBT3904F NPN Silicon Transistor Descriptions PIN Connection General small signal application Switching application 3 Features Low collector saturation voltage 1 Collector output capacitance Complementary pair with SBT3906F 2 SOT-23F Ordering Information Type NO. Marking Package Code 1A SBT3904F SOT-23F Device Code
mmbt3904.pdf
MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION A L General switching and amplification. 3 3 Top View C B 1 1 2 2 K E PACKAGING DIMENSION
mmbt3904fw.pdf
MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 A Epitaxial Planar Die Construction Dim Min Max L Complementary PNP Type Available A 1.500 1.700 (MMBT3906FW) B 0.750 0.850 Ideal for Medium Power Amplification and S Top View B C 0.700 0.900 Switching D 0.250 0.350 COLLECTOR V G G 0.900 1.100 3 3 H 0.0
mmbt3904z.pdf
MMBT3904Z 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-923 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 2 PACKAGING DIMENSION Millimet
mmbt3904t.pdf
MMBT3904T NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBT3904T MA 3000/Tape&Reel Millimeter Millimete
mmbt3904w.pdf
MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323(SC-70) Epitaxial Planar Die Construction Dim Min Max A Complementary PNP Type Available L A 1.800 2.200 (MMBT3906W) B 1.150 1.350 3 Ideal for Medium Power Amplification and S C 0.800 1.000 Top View B Switching
mmbt3904zw.pdf
MMBT3904ZW 200 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free WBFBP-03E FEATURES Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. MARKING Millimeter Millimeter REF. REF. Min. Max. Min. Max.
mmbt3904.pdf
MMBT3904 Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case
mmbt3904l.pdf
MMBT3904L Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Cas
mmbt3904.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT3906 MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emit
mmbt3904m.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors SOT-723 MMBT3904M TRANSISTOR (NPN) FEATURE Complementary to MMBT3906M Small Package MARKING 1N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted ) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage
mmbt3904t.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT3906T Small Package MARKING 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER V Collector-Emitter Voltage 40 V CEO
mmbt3904gh.pdf
Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 1 2 MMBT3904GH 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Char
mmbt3904wg.pdf
Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product COLLECTOR 3 3 BASE 1 1 MMBT3904WG 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol
mmbt3904wgh.pdf
Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT3904WGH 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Ch
mmbt3904.pdf
MMBT3904 TRANSISTOR(NPN) SOT-23 FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction (3)C MARKING 1AM 1AM (1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curre
mmbt3904.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3904( MMBT3904) MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit
mmbt3904.pdf
MMBT3904 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Vo
mmbt3904lt1.pdf
MMBT3904LT1 NPN SWITCHING TRANSISTOR 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min Max A 2.70 3.10 K B (MMBT3906). B 1.10 1.50 C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 Typical J D E 0.35 0.48 Collector-emitter Voltage VCEO=40V. G G 1.80 2.00 H 0.02 0.1 H
mmbt3904.pdf
MMBT3904 COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 1 BASE 2 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (
mmbt3904t.pdf
MMBT3904T General Purpose NPN SiliconTransistor 3 COLLECTOR 3 P b Lead(Pb)-Free 1 2 1 BASE SC-89 2 SOT-523F EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit (1) Total
mmbt3904w.pdf
MMBT3904W COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 BASE 1 2 2 EMITTER SOT-323(SC-70) Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation TA=
mmbt3904e.pdf
MMBT3904E NPN General Purpose Transistor 3 2 1 1 The MMBT3904E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. SOT-1123 It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. COLLECTOR This device is ideal for low-power surface mount applications 3 where board space is at a premium. FE
mbt3904dw.pdf
MBT3904DW Dual General Purpose Transistor 2 1 3 6 5 4 NPN+NPN Silicon 1 2 3 4 5 6 SOT-363(SC-88) NPN+NPN Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipa
mmbt3904dw1t1.pdf
FM120-M WILLAS MMBT3904DW1T1 THRU Dual General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optim
mmbt3904lt1.pdf
FM120-M WILLAS MMBT3904LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. RoHS product for packing code suffix "G", SOD-123H Low profile surfa
mmbt3904tt1.pdf
FM120-M WILLAS THRU MMBT3904TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features NPN ocess de Batch prSiliconsign, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE Low profile surface mounted application in
mmbt3904slt1.pdf
FM120-M WILLAS MMBT3904SLT1 THRU SOT-923 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline TRANSISTOR (NPN) Features FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT 923 Lo
hmbt3904.pdf
Spec. No. HE6814 HI-SINCERITY Issued Date 1993.06.23 Revised Date 2004.08.17 MICROELECTRONICS CORP. Page No. 1/4 HMBT3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT3904 is designed for general purpose switching amplifier applications. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.......................................................
mmbt3904lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.2 W (Tamb=25 ) 1. 3 Collector current ICM 0.2 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range Unit mm TJ, Ts
mmbt3904.pdf
SOT-23 Plastic-Encapsulate Transistors FEATURES SOT-23 As complementary type, the PNP transistor MMBT3906 is Recommended Epitaxial planar die construction MARKING 1AM MARKING 1AM MARKING 1AM MARKING 1AM 1 BASE MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 2 EMITTER Symbol Parameter Value Units Symbol Parameter Va
mmbt3904 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES Complimentary to MMBT3906 MARKING 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-
mmbt3904.pdf
MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 150 C O Storag
lmbt3904n3t5g.pdf
LMBT3904N3T5G S-LMBT3904N3T5G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT883 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Mar
lmbt3904lt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURES LMBT3904LT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. S-LMBT3904LT1G 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU
lmbt3904tt1g lmbt3904tt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1G RoHS requirements. S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking
lmbt3904lt1g lmbt3904lt3g s-lmbt3904lt1g s-lmbt3904lt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes a LMBT3904LT1G Pb-Free Lead Finish S-LMBT3904LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable
lmbt3904lt1g lmbt3904lt3g.pdf
LMBT3904LT1G S-LMBT3904LT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic
lmbt3904tt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1G RoHS requirements. S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking
lmbt3904dw1t1g lmbt3904dw1t3g.pdf
LMBT3904DW1T1G S-LMBT3904DW1T1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V Simplifi
lmbt3904wt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURES LMBT3904W T1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. S-LMBT3904W T1G 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable. 1 DEVICE MARKING AND RESISTOR
lmbt3904wt1g lmbt3904wt3g.pdf
LMBT3904WT1G S-LMBT3904WT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic
lmbt3904dw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3904DW1T1G device is a spin off of our popular LMBT3904DW1T1G SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT 363 S-LMBT3904DW1T1G six leaded surface mount package. By putting two discrete devices in one package , this device is ideal fo
kmbt3904.pdf
Product specification KMBT3904(MMBT3904) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Epitaxial planar die construction 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6V Coll
mmbt3904ltg.pdf
MMBT3904LTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Maximum Ratings 1 Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc SOT 23 Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc 3 COLLECTOR Thermal Charact
kmbt3904dw.pdf
SMD Type Transistors NPN Transistors MMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -
mmbt3904.pdf
SMD Type Transistors NPN Transistors MMBT3904 (KMBT3904) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Complementary to MMBT3906 1 2 Marking 1AM +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V
kmbt3904t.pdf
SMD Type Transistors NPN Transistors MMBT3904T (KMBT3904T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Small Package 2 1 Complementary to MMBT3906T 3 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec
mmbt3904t.pdf
SMD Type Transistors NPN Transistors MMBT3904T (KMBT3904T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Small Package 2 1 Complementary to MMBT3906T 3 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec
mmbt3904w.pdf
SMD Type Transistors NPN Transistors MMBT3904W Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=40V Complementary to MMBT3906W 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Colle
kmbt3904.pdf
SMD Type Transistors NPN Transistors KMBT3904(MMBT3904) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Epitaxial planar die construction 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Volta
mmbt3904-d.pdf
SMD Type Transistors NPN Transistors (KMBT3904-D) MMBT3904-D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Complementary to MMBT3906-D 1 2 Marking 1AM +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VC
mmbt3904dw.pdf
SMD Type Transistors NPN Transistors MMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -
mmbt3904.pdf
MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) 225 mWatt VOLTAGE 40 Volt POWER SOT-23 FEATURES NPN epitaxial silicon, planar design 0.120(3.04) Collector-emitter voltage VCE = 40V 0.110(2.80) Collector current IC = 200mA Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc,f=100MHz Lead free in compliance with EU RoHS 2.0 0.056(1.40) Gr
mmbt3904fn3.pdf
MMBT3904FN3 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) DFN 3L POWER VOLTAGE 40 Volt 250 mWatt 0.042(1.05) FEATURES 0.037(0.95) NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) M
mmbt3904w.pdf
MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) SOT-323 150 mWatt VOLTAGE 40 Volt POWER FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V 0.087(2.20) Collector current IC = 200mA 0.070(1.80) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.054(1.35) 0.045(1.15) MEC
mmbt3904-g.pdf
General Purpose Transistor MMBT3904-G (NPN) RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 2 0.080 (2.04) 0.070 (1.78) Collector 0.007 (0.18) 3 0.003 (0.08) 0.044 (1.11) 0.104 (2.64) 0.035 (0.89) 0.083 (2.10) 1 Base 0.004 (0.100)
mmbt3904-hf.pdf
General Purpose Transistor MMBT3904-HF (NPN) RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -Epitaxial planar die construction 3 -As complementary type, the PNP 0.055(1.40) 0.047(1.20) transistor MMBT3904-HF is recommended 1 2 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) 1 Base 0.004(0.10
dmbt3904.pdf
DC COMPONENTS CO., LTD. DMBT3904 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85
mmbt3904.pdf
Product specification NPN SWITCHING TRANSISTOR MMBT3904 FEATURES Epitaxial planar die construction. Pb Complementary PNP type available Lead-free (MMBT3906). Collector Current Capability I =200mA. CM Collector-emitter Voltage V =40V. CEO MSL 1 APPLICATIONS SOT-23 General switching and amplification ORDERING INFORMATION Type No. Marking Pac
gstmmbt3904.pdf
GSTMMBT3904 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT3904F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT3904F SOT-23 1AM Ordering Information GS P/N GSTMMBT3904 F Pb Free Co
kbt3904c.pdf
KBT3904C NPN Silicon Transistor 2018.09.07 2018.09.07 2018.09.07 2018.09.07 1 000 2018.03.02 2 TAPING 001 2018.09.07 AUK Dalian 1 KBT3904C NPN Silicon Transistor De
mmbt3904.pdf
MMBT3904 NPN Switching Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 40 Vdc Collector-Emitter Voltage VCBO 60 Vdc Collector-Base Voltage V 6.0 Vdc Emitter-Base Voltage EBO Ic 200 mAdc Collector Current-Continuous THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERIST
mmbt3904m.pdf
MMBT3904M NPN General Purpose Amplifier Capable of 100m Watts of Power Dissipation and 200mA Ic Operating and Storage Junction Temperatures -55 to 150 Small Outline Surface Mount Package RoHS compliant / Green EMC Device Marking Code MMBT3904M 1N Maximum Ratings Ta = 25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60
mmbt3904t.pdf
MMBT3904T NPN Transistor 3 2 Features 1.Base Small Package 2.Emitter 3.Collector Complementary to MMBT3906T 1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 200 mA Collecto
mmbt3904w.pdf
MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range
mmbt3904.pdf
R UMW UMW MMBT3904 UMW MMBT3904 UMW MMBT3904 UMW MMBT3904 UMW MMBT3904 NPN Transistors Features SOT 23 Small Package Complementary to MMBT3906T MARKING 1. BASE 2. EMITTER 1AM 3. COLLECTOR Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6
mmbt3904.pdf
MMBT3904 NPN Plastic-Encapsulate Transistor Features Pin Configurations V CE = 40V 3 COLLECTOR I C = 0.2A f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE 2 EMITTER General Description As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die constructio SOT-23 Plastic Package. Absolute Maximum Ratings @T =25 unless otherwise noted
mmbt3904.pdf
MMBT3904 TRANSISTOR (NPN) FEATURES Complementary to MMBT3906 MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT 23 Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW R JA Thermal Resistance From Junction To Ambient 625 /W T
mmbt3904.pdf
NPN SWITCHING TRANSISTOR Formosa MS MMBT3904 TRANSISTOR (NPN) FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT3906). Collector Current Capability Ic=200mA. Collector-emitter Voltage VCEO=40V. APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM
mmbt3904.pdf
MMBT3904 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Complementary to MMBT3906 Marking 1AM Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V C EBO I Collector Current 200 mA C P Collector Power Dissipation 200 mW C R JA Thermal Resistance From Junction
mmbt3904.pdf
MMBT3904 NPN SWITCHING TRANSISTOR FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT3906). SOT-23 Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 1 APPLICATIONS General switching and amplification ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RA
mmbt3904.pdf
MMBT3904 TRANSISTOR(NPN) FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction MARKING 1AM SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector
mmbt3904t-ms.pdf
www.msksemi.com MMBT3904T-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) 3 MMBT3904T-MS 1. BASE FEATURES 2. EMITTER 1 Complementary to MMBT3906T 3. COLLECTOR 2 Small Package SOT-523 MARKING 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V
mmbt3904-ms.pdf
www.msksemi.com MMBT3904-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complementary to MMBT3906-MS MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE 2. EMITTER SOT 23 MARKING 1AM 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta
mmbt3904-t3 mmbt3904g-t3.pdf
MMBT3904 GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial Planar Transistor For Switching And Amplifier Applications Collector-emitter Voltage VCE=40V Collector Current IC=200mA MECHANICAL DATA C E Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUM
mmbt3904.pdf
MMBT3904 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 200 mA C Power Dissipation P
mmbt3904-l mmbt3904-h.pdf
Jingdao Microelectronics co.LTD MMBT3904 MMBT3904 SOT-23 NPN TRANSISTOR 3 FEATURES Complementary to MMBT3906 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 60 V 2.EMITTER Collector Emitter Voltage VCEO 40 V 3.COLLECTOR Emitter Base Voltage VEB
mmbt3904t.pdf
MMBT3904T NPN Plastic-Encapsulate Transistors FEATURES Complementary to MMBT3906T Small Package MARKING MA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO SOT 523 V Collector-Emitter Voltage 40 V CEO 1. BASE V Emitter-Base Voltage 6 V EBO 2. EMITTER I Collector Current 200 mA C 3. COLL
mmbt3904k.pdf
MMBT3904K SOT-23 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Features Power Dissipation of 200mW High Stability and High Reliability Mechanical Data Marking 1AM SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Par
mmbt3904dw.pdf
MMBT3904DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features Low current, Low voltage. Applications General purpose amplifier and switching. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMBT3904DW Absolute Maximum Ratings(Ta
mmbt3904t.pdf
TAK CHEONG SEMICONDUCTOR SOT-523 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units 3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 2 VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA 1 Power Dissipation PD 200
mmbt3904n3.pdf
TAK CHEONG SEMICONDUCTOR SOT-883 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units 3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 2 IC Collector Current 200 mA 1 Power Dissipation PD
mmbt3904l mmbt3904h.pdf
Integrated in OVP&OCP products provider MMBT3904 SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Sm
mmbt3904 mmbt3904l mmbt3904h mmbt3904j.pdf
MMBT3904 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Complementary to MMBT3906 Marking 1AM Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.2 A Collector Power Dis
mmbt3904.pdf
MMBT3904 TRANSISTOR NPN TRANSISTOR NPN TRANSISTOR NPN TRANSISTOR NPN TRANSISTOR NPN FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING 1AM 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Par
mmbt3904t.pdf
MMBT3904T General Purpose Transistor NPN Silicon Surface Mount Plastic Package Features Simplifies Circuit Design 1. Base RoHS Compliant 2. Emitter Green EMC 3. Collector Marking 1N Maximum Ratings (T =25 C unless otherwise noted) a Symbol Parameter Value Unit V Collector Base Voltage 60 V CBO V Collector Emitter Voltage 40 V CEO V Emitter Base Voltage 6 V EBO
mmbt3904l mmbt3904h.pdf
MMBT3904 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBT3906 Collector Current Ic=200mA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector P
mmbt3904l mmbt3904h.pdf
MMBT3904 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack
mmbt3904.pdf
MMBT3904 AO3400 SI2305 MMBT3904 TRANSISTOR (NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING 1AM 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Colle
mmbt3904m.pdf
MMBT3904M MMBT3904M MMBT3904M SOT-723 MMBT3904M TRANSISTOR (NPN) FEATURE Complementary to MMBT3906M Small Package 1. BASE MARKING 1N 2. EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuou
mmbt3904t.pdf
MMBT3904T MMBT3904T MMBT3904T TRANSISTOR(NPN) MMBT39 0 4T FEATURES SOT 523 Complementary to MMBT3906T Small Package MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 200 mA C PC C
mmbt3904w.pdf
MMBT3904W MMBT3904W MMBT3904W MMBT3904W TRANSISTOR(NPN) MMBT39 0 4W for switching and amplifier applications SOT 323 3 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power
sebt3904u.pdf
SHANGHAI June 2006 MICROELECTRONCS CO., LTD. SEBT3904U NPN switching transistor Features Low current (max. 100 mA). Low voltage (max. 40 V). Applications Telephony and professional communication equipment. DESCRIPTION NPN switching transistor in a SOT323 plastic package PNP complement SEBT3906U. Absolute maximum ratings (Ta=25 ) CONDITIO Par
mmbt3904.pdf
RoHS COMPLIANT MMBT3904 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking 1AM Off Characteristics Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 40 Collector-Base Voltage VCBO V IC=10uAdc, IE=0 60 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0 Collec
mmbt3904t.pdf
RoHS COMPLIANT MMBT3904T NPN General Purpose Amplifier Features Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion Epoxy meets UL-94 V-0 flammability rating, halogen-free Mechanical Data ackage SOT-523 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 1N Maximum R
mmbt3904.pdf
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dis
mmbt3904.pdf
MMBT3904 MMBT3904 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT3906 Power Dissipation of 200mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT3904 1AM . Maximum R
mmbt3904m.pdf
MMBT3904M MMBT3904M NPN General Purpose Transistor General description NPN General Purpose Transistor FEATURES SOT-723 General Purpose Transistors. VCEO 40V Ic 200mA PC 100mW Complementary to MMBT3906M Small Outline Surface Mount Package. RoHS Compliant / Green EMC. Type MMBT3904M Marking 1N Absolute Maximum Ratings(Ta=25 ) Para
mmbt3904t.pdf
MMBT3904T MMBT3904T SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.002g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector
mmbt3904w.pdf
MMBT3904W MMBT3904W SOT-323 Silicon General Purpose Transistor (NPN) General description SOT-323 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.001g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector
mmbt3904c.pdf
MMBT3904C MMBT3904C SOT-883 Silicon General Purpose Transistor (NPN) General description SOT-883 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.001g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector
mmbt3904.pdf
TRANSISTOR (NPN) FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6
mmbt3904t.pdf
SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT3906T Small Package MARKING 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR V Emitter-Base Voltage 6 V EBO I Colle
mmbt3904w.pdf
MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code 1E O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Stor
mmbt3904.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT3904 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc - Collector-Base Voltage VCBO 40 Vdc - Emitter-Base Voltage VEBO 6.0 Vdc - Co
mmbt3904.pdf
MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40Volts POWER 225mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.2A. ansition frequency fT>300MHz @ Tr IC=10mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals So
mmbt3904.pdf
MMBT3904 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT3906 Surface Mount device MECHANICAL DATA SOT-23 Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 60 V CBO Collec
mmbt3904.pdf
NPN MMBT3904 MMBT3904 TRANSISTOR (NPN) FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta
mmbt3904.pdf
MMBT3904 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING 1AM SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Vol
hmbt3904.pdf
HMBT3904 MOT NPN-TRANSISTOR NPN NPN Switching Transistor SMD HMBT3904 HMBT3904LT1 Excellent hFE linearity NPN, BEC Low noise General Purpose Transistors Transistor Polarity NPN Transistor pinout BEC SOT-23 Package MMBT3904 MMBT3904LT1 Marking Code 1AM HMMBT3904LT1 hFE
mmbt3904l mmbt3904h.pdf
YFSEMI ELECTRON SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT3906 MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Voltage 6 V IC Coll
mmbt3904.pdf
MMBT3904 Silicon Epitaxial Planar Transistor(NPN) C E Features High Collector Current B Complementary To MMBT3906 SOT-23 Excel lent HFE Li nea r l ty Absolute Maximum Ratings* unless otherwise noted TA = 25 C Parameter Value Units Symbol V Collector-Base Voltage 60 CBO V VCEO 40 V Collector-Emitter Voltage V EBO Emitter-Base Voltage 6 V IC mA Collector Current -Continuo
hmbt3904.pdf
HMBT3904 NPN-TRANSISTOR NPN, 200mA, 40V NPN NPN Switching Transistor SMD HMBT3904 HMBT3904LT1 Excellent hFE linearity NPN, BEC Low noise General Purpose Transistors Complementary to HMBT3906 Transistor Polarity NPN Transistor pinout BEC MMBT3904
mmbt3904.pdf
isc Silicon NPN Transistor MMBT3904 DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Telephony and professional communication equipment. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V C
lmbt3904lt1g.pdf
isc Silicon NPN RF Transistor LMBT3904LT1G DESCRIPTION Low Noise Figure NF = 5 dB(MAX) @V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0k CE C S Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
mmbt3904.pdf
MMBT3904 NPN SWITCHING TRANSISTOR FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT3906). Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 3 APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RATING @ Ta=
Другие транзисторы: BFT57CSM, BFT57DCSM, BFT58CSM, BFT58DCSM, BFT59CSM, BFT59DCSM, BT2222, BT2222A, BC546, BTA1012E3, BTA1015A3, BTA2039J3, BTB1184J3S, BTB1236AL3, BTB1426A3, BTB7150N3, BTB772SA3
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