BTB772SA3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTB772SA3
Código: B772
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Capacitancia de salida (Cc): 55
pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar BTB772SA3
BTB772SA3
Datasheet (PDF)
..1. Size:352K cystek
btb772sa3.pdf 
Spec. No. : C817A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date:2013.03.21 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77
7.1. Size:221K cystek
btb772st3.pdf
Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 BBase CCollector EEmitter E C B Absolute
8.1. Size:272K cystek
btb772j3.pdf
Spec. No. : C809J3 Issued Date : 2008.06.12 CYStech Electronics Corp. Revised Date: 2010.12.08 Page:1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3ARCE(SAT) 225m typ.Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD882J3 RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA
8.2. Size:247K cystek
btb772am3.pdf
Spec. No. : C817M3-H Issued Date : 2003.06.17 CYStech Electronics Corp. Revised Date:2013.08.12 Page:1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB772AM3 RCESAT(typ) 0.12 Features Low VCE(sat), typically -0.24 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882AM3 Pb-free lead plating an
8.3. Size:248K cystek
btb772i3.pdf
Spec. No. : C817I3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date: 2011.08.30 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -3ABTB772I3 RCESAT(TYP) 150m Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics High temperature soldering guaranteed : 265C/5s, 0.25(6.3
8.4. Size:229K cystek
btb772t3.pdf
Spec. No. : C817T3-H Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882T3 Pb-free lead plating and halogen-free package Symbol Outline
8.5. Size:297K cystek
btb772aj3.pdf
Spec. No. : C240M3 CYStech Electronics Corp. Issued Date : 2013.02.19 Revised Date : Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB772AJ3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline TO-252AA BTB772AJ3BBase C
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