C3875S Todos los transistores

SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 Excellent hFE Linearity B 1.30+0.20/-0.15 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 High hFE hFE=70 700. E 2.40+0.30/-0.20 1 G 1.90 Low Noise NF=1dB(Typ.), 10dB(Max.).

KTC3875S NPN Silicon Epitaxial Planar Transistor For switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.Emitter 3.Collector O SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter

MCC Micro Commercial Components TM KTC3875-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTC3875-GR Phone (818) 701-4933 Fax (818) 701-4939 Features High hFE and Low Noise Epitaxial Planar Complementary to KTA1504 Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Transistors RoHS Compliant. See ordering information) Ha

KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High hFE A L Low noise 3 3 Complementary to KTA1504 Top View C B 1 1 2 CLASSIFICATION OF hFE 2 K E Product-Rank KTC3875-O KTC3875-Y KTC3875-GR KTC3875-BL D Range 70 140 120 240 200 400 350

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE Low noise 2. EMITTER 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50

KTC3875 TRANSISTOR (NPN) SOT-23 FEATURES High hFE Low noise 1. BASE Complementary to KTA1504 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissip

KTC3875 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High hFE hFE=70-700 Low noise NF=1dB(Typ),10dB(Max) Complementary to KTA1504 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base V

KTC3875 COLLECTOR Plastic-Encapsulate Transistors 3 NPN Silicon 1 BASE 2 SOT-23 EMITTER (Ta=25 C) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 50 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -Continuous IC mAdc 150 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit (1) Total Device Dissi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE 2. EMITTER Low noise 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEB

SEMICONDUCTOR KTC3875LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR General purpose application Package SOT-23 * Complement to KTA1504LT1 * Collector Current Ic=150mA * low noise NF=10db(max) ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage

SMD Type Transistors NPN Transistors KTC3875 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High hFE Low noise 1 2 +0.1 +0.05 Complementary to KTA1504 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage V

MMBTSC3875 NPN Transistor Features For Switching and AF Amplifier Applications. SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended. 1.Base 2.Emitter 3.Collector Marking MMBTSC3875O ALO MMBTSC3875Y ALY MMBTSC3875G ALG MMBTSC3875L ALL Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

KTC3875 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to KTA1504 High h FE Low Noise Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Ba