CMLT2207 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMLT2207
Código: L7G
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-563
Búsqueda de reemplazo de transistor bipolar CMLT2207
CMLT2207 Datasheet (PDF)
cmlt2207.pdf
CMLT2207Gwww.centralsemi.comSURFACE MOUNT SILICONDUAL, COMPLEMENTARY DESCRIPTION:TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal
cmlt2222a.pdf
CMLT2222AGwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2222AG consists of two (2) isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. These devices have been designed for small signal general purpose and switching applications.MAR
cmlt2907a.pdf
CMLT2907Awww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose and switching applications.
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
