CMLT2207 Datasheet, Equivalent, Cross Reference Search
Type Designator: CMLT2207
SMD Transistor Code: L7G
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-563
CMLT2207 Transistor Equivalent Substitute - Cross-Reference Search
CMLT2207 Datasheet (PDF)
cmlt2207.pdf
CMLT2207Gwww.centralsemi.comSURFACE MOUNT SILICONDUAL, COMPLEMENTARY DESCRIPTION:TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal
cmlt2222a.pdf
CMLT2222AGwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2222AG consists of two (2) isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. These devices have been designed for small signal general purpose and switching applications.MAR
cmlt2907a.pdf
CMLT2907Awww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose and switching applications.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
