CMLT2907A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMLT2907A

Código: L07

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-563

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CMLT2907A datasheet

 ..1. Size:517K  central
 cmlt2907a.pdf pdf_icon

CMLT2907A

CMLT2907A www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION DUAL PNP TRANSISTOR The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose and switching applications.

 9.1. Size:520K  central
 cmlt2222a.pdf pdf_icon

CMLT2907A

CMLT2222AG www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION DUAL NPN TRANSISTOR The CENTRAL SEMICONDUCTOR CMLT2222AG consists of two (2) isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. These devices have been designed for small signal general purpose and switching applications. MAR

 9.2. Size:520K  central
 cmlt2207.pdf pdf_icon

CMLT2907A

CMLT2207G www.centralsemi.com SURFACE MOUNT SILICON DUAL, COMPLEMENTARY DESCRIPTION TRANSISTOR The CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal

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