All Transistors. CMLT2907A Datasheet

 

CMLT2907A Datasheet and Replacement


   Type Designator: CMLT2907A
   SMD Transistor Code: L07
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-563
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CMLT2907A Datasheet (PDF)

 ..1. Size:517K  central
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CMLT2907A

CMLT2907Awww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose and switching applications.

 9.1. Size:520K  central
 cmlt2222a.pdf pdf_icon

CMLT2907A

CMLT2222AGwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2222AG consists of two (2) isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. These devices have been designed for small signal general purpose and switching applications.MAR

 9.2. Size:520K  central
 cmlt2207.pdf pdf_icon

CMLT2907A

CMLT2207Gwww.centralsemi.comSURFACE MOUNT SILICONDUAL, COMPLEMENTARY DESCRIPTION:TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal

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