CMNT3904E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMNT3904E  📄📄 

Código: CL

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-953

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CMNT3904E datasheet

 ..1. Size:363K  central
 cmnt3904e cmnt3906e.pdf pdf_icon

CMNT3904E

CMNT3904E NPN CMNT3906E PNP www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMNT3904E SILICON TRANSISTOR and CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini SOT-953 packag

 ..2. Size:363K  central
 cmnt3904e.pdf pdf_icon

CMNT3904E

CMNT3904E NPN CMNT3906E PNP www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMNT3904E SILICON TRANSISTOR and CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini SOT-953 packag

 7.1. Size:363K  central
 cmnt3906e.pdf pdf_icon

CMNT3904E

CMNT3904E NPN CMNT3906E PNP www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMNT3904E SILICON TRANSISTOR and CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini SOT-953 packag

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