CMPT3820 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMPT3820
Código: 38C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar CMPT3820
CMPT3820 Datasheet (PDF)
cmpt3820.pdf
CMPT3820www.centralsemi.comSURFACE MOUNTVERY LOW VCE(SAT)DESCRIPTION:NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3820 is a very low VCE(SAT) NPN Transistor, designed forapplications where size and efficiency are primerequirements. Packaged in an industry standard SOT-23, this device brings updated electrical specifications and characteristics suitable for the most
cmpt3904 cmpt3906.pdf
CMPT3904 CMPT3904G* NPNCMPT3906 CMPT3906G* PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThese CENTRAL SEMICONDUCTOR devices are SILICON TRANSISTORScomplementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications.MARKING COD
cmpt3904e cmpt3906e.pdf
CMPT3904E NPNCMPT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORSCMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver
cmpt3410.pdf
CMPT3410www.centralsemi.comSURFACE MOUNTLOW VCE(SAT)DESCRIPTION:NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3410 type is a NPN Low VCE(SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is designed for battery driven, handheld devices requiring high current and Low VCE(SAT).MARKING
cmpt3904e.pdf
CMPT3904E NPNCMPT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORSCMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver
cmpt3906e.pdf
CMPT3904E NPNCMPT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONDESCRIPTION:SURFACE MOUNT COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORSCMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050