CMUT5087E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMUT5087E
Código: U87
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SOT-523
Búsqueda de reemplazo de transistor bipolar CMUT5087E
CMUT5087E Datasheet (PDF)
cmut5087e cmut5088e series.pdf
CMUT5087E PNPCMUT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT5087E and SILICON TRANSISTORSCMUT5088E are Silicon transistors in an ULTRAmini surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMUT5087E: U87CMUT5088E:
cmut5087e.pdf
CMUT5087E PNPCMUT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT5087E and SILICON TRANSISTORSCMUT5088E are Silicon transistors in an ULTRAmini surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMUT5087E: U87CMUT5088E:
cmut5088e.pdf
CMUT5087E PNPCMUT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT5087E and SILICON TRANSISTORSCMUT5088E are Silicon transistors in an ULTRAmini surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMUT5087E: U87CMUT5088E:
cmut5179.pdf
CMUT5179www.centralsemi.comSURFACE MOUNT NPN SILICONDESCRIPTION:RF TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications. MARKING CODE: HC7SOT-523 CASE
cmut5401.pdf
CMUT5401www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: 54CSOT-523 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage V
cmut5401e.pdf
CMUT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: 4C5FEATURES:SOT-523 CASE High Collector Bre
cmut5551e.pdf
CMUT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: 5C1FEATURES: High Collector Breakdown Voltag
cmut5551.pdf
CMUT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: 55CSOT-523 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage
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