D44H8G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D44H8G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de D44H8G
D44H8G Datasheet (PDF)
d44h8g.pdf

D44H Series (NPN),D45H Series (PNP)Preferred DevicesComplementary SiliconPower TransistorsThese series of plastic, silicon NPN and PNP power transistors canbe used as general purpose power amplification and switching suchhttp://onsemi.comas output or driver stages in applications such as switching regulators,converters and power amplifiers.10 AMP COMPLEMENTARYFeaturesSI
d44h8 d44h11.pdf

D44H8D44H11NPN SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATIONVOLTAGE FAST SWITCHING SPEEDAPPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER32DESCRIPTION1The D44H8, and D44H11 are siliconmultiepitaxial planar NPN transistors mounted inTO-220Jedec TO-220 plastic package.They are inteded for various swit
d44h8 d44h11 d45h8 d45h11.pdf

D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p
d44h8 d44h11 d45h8-d45h11.pdf

D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p
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