Биполярный транзистор D44H8G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: D44H8G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 90 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO-220
D44H8G Datasheet (PDF)
d44h8g.pdf
D44H Series (NPN),D45H Series (PNP)Preferred DevicesComplementary SiliconPower TransistorsThese series of plastic, silicon NPN and PNP power transistors canbe used as general purpose power amplification and switching suchhttp://onsemi.comas output or driver stages in applications such as switching regulators,converters and power amplifiers.10 AMP COMPLEMENTARYFeaturesSI
d44h8 d44h11.pdf
D44H8D44H11NPN SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATIONVOLTAGE FAST SWITCHING SPEEDAPPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER32DESCRIPTION1The D44H8, and D44H11 are siliconmultiepitaxial planar NPN transistors mounted inTO-220Jedec TO-220 plastic package.They are inteded for various swit
d44h8 d44h11 d45h8 d45h11.pdf
D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p
d44h8 d44h11 d45h8-d45h11.pdf
D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p
d44h8 nzt44h8 d44h11.pdf
February 2010D44H8 / NZT44H8 / D44H11NPN Power AmplifierFeatures This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from process 4Q.C ECBB C E TO-220SOT-223 D44H8 / D44H11 NZT44H8Absolute Maximum Ratings* TA=25C unless otherwise notedValueSymbol Parameter UnitsD44H8D44H11NZT44H8VCEO Collec
d44h8.pdf
D44H8 NZT44H8CEBC CEBTO-220SOT-223NPN Power AmplifierThis device is designed for power amplifier, regulator and switchingcircuits where speed is important. Sourced from Process 4Q.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VI Collector Current - Continuous 8.0 AC-55 to +150T , Tstg
d44h8 d45h8 d44h11 d45h11.pdf
D44H Series (NPN),D45H Series (PNP)Complementary SiliconPower TransistorsThese series of plastic, silicon NPN and PNP power transistors canbe used as general purpose power amplification and switching such ashttp://onsemi.comoutput or driver stages in applications such as switching regulators,converters and power amplifiers.10 AMP COMPLEMENTARYSILICON POWER Features Lo
d44h8 nzt44h8.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
d44h8.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistors D44H8 DESCRIPTION With TO-220C package Fast switching speedsLow collector saturation voltageAPPLICATIONS For general purpose power amplificationand switching regulators,converters andpower amplifiers applicationsPINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitte
d44h8.pdf
isc Silicon NPN Power Transistors D44H8DESCRIPTIONLow Saturation VoltageFast Switching SpeedsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitching such as output or driver stages in applicationssuch as switching regulators,converters and power amplifier.ABSOLUTE MAXIM
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050