CHT5551GP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHT5551GP
Código: FT
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar CHT5551GP
CHT5551GP Datasheet (PDF)
cht5551gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5551GPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Small flat package. ( SOT-23 )* Suitable for high packing density.(1)CONSTRUCTION(3)*NPN SILICON Transistor(2)CONSTRUCTIONFT( ) ( ).055 1.40
cht5551wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5551WGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* Suitable for high packing density.CONSTRUCTION0.651.30.12.00.20.65* NPN transistors in one package.0.30.11.250.1
cht5551zgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5551ZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density.1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*NPN SIL
cht5551sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5551SGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. ( SC-88/SOT-363 )* Suitable for high packing density.(1) (6)CONSTRUCTION0.651.2~1.4 2.0~2.2*NPN SILICON Transistor0.65
cht5551xgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT5551XGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-62/SOT-89FEATURE* Suitable for high packing density.4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05CONSTRUCTION*NPN SILICON Transistor+0.080.45-0.05+0.08 +0.080.40-0.05 0.
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC2229Y | 2SA364
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