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CHTA42XGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CHTA42XGP

Código: ZHN

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: SOT-89

Búsqueda de reemplazo de transistor bipolar CHTA42XGP

 

CHTA42XGP Datasheet (PDF)

0.1. chta42xgp.pdf Size:72K _chenmko

CHTA42XGP
CHTA42XGP

RATING CHARACTERISTIC CURVES ( CHTA42XGP )THERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITRth j-a thermal resistance from junction to ambient note 1 104 K/WNote1. Transistor mounted on an FR4 printed-circuit board.CHARACTERISTICSTamb =25 C unless otherwise specied.SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITICBO collector cut-off current VCB = 200 V - nA100

8.1. chta42lgp.pdf Size:90K _chenmko

CHTA42XGP
CHTA42XGP

CHENMKO ENTERPRISE CO.,LTDCHTA42LGPSURFACE MOUNT High Voltage NPN Transistor VOLTAGE 300 Volts CURRENT 500 mAmpereAPPLICATION* Small Signal Amplifier .FEATURESOT-23* Surface mount package. (SOT-23)* Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA) * Low cob. Cob=3.0pF(Typ.)* PD= 300mW (mounted on ceramic substrate).* High saturation current capability.(1)(3)CO

8.2. chta42zgp.pdf Size:144K _chenmko

CHTA42XGP
CHTA42XGP

CHENMKO ENTERPRISE CO.,LTDCHTA42ZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density.1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*NPN SILI

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