2PB709AQ . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2PB709AQ
   Código: BQ
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 75 MHz
   Capacitancia de salida (Cc): 18 pF
   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: SC59

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2PB709AQ Datasheet (PDF)

0.1. Size:172K nxp
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DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D1142PB709AWPNP general purpose transistorProduct data sheet 2002 Jun 26NXP Semiconductors Product data sheetPNP general purpose transistor 2PB709AWFEATURES PINNING High collector current (max. 100 mA)PIN DESCRIPTION Low collector-emitter saturation voltage (max. 500 mV).1 base2 emitterAPPLICATIONS3 colle

0.2. Size:278K nxp
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

0.3. Size:172K nxp
2pb709aqw.pdf