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DK31 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DK31
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 0.5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-3
 
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DK31 Datasheet (PDF)

 ..1. Size:24K  shaanxi
 dk31.pdf pdf_icon

DK31

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK31NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards: GJB33 -85, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching voltage

 0.1. Size:23K  shaanxi
 dk319.pdf pdf_icon

DK31

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK319NPN Silicon Low Frequency High Power Transistor Features: 1. Three pins isnt connected with the cover. It could be produced according to the requirement. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4.

 0.2. Size:24K  shaanxi
 dk313.pdf pdf_icon

DK31

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK313NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards: GJB33A -97. 4. Use for high power switch circuit,switching voltage-stabilized sourcefy

Otros transistores... DK11 , DK150 , DK151 , DK200 , DK201 , DK30 , DK300 , DK301 , 2SC828 , DK313 , DK319 , DK50 , DK51 , DMA20101 , DMA20201 , DMA20401 , DMA20402 .

History: 2N1964-46

 

 
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