DK31 Todos los transistores

 

DK31 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DK31

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 0.5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO-3

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DK31 datasheet

 ..1. Size:24K  shaanxi
dk31.pdf pdf_icon

DK31

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK31 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33 -85, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching voltage

 0.1. Size:23K  shaanxi
dk319.pdf pdf_icon

DK31

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK319 NPN Silicon Low Frequency High Power Transistor Features 1. Three pins isn t connected with the cover. It could be produced according to the requirement. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4.

 0.2. Size:24K  shaanxi
dk313.pdf pdf_icon

DK31

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK313 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97. 4. Use for high power switch circuit,switching voltage-stabilized sourcefy

Otros transistores... DK11 , DK150 , DK151 , DK200 , DK201 , DK30 , DK300 , DK301 , 2SC2383 , DK313 , DK319 , DK50 , DK51 , DMA20101 , DMA20201 , DMA20401 , DMA20402 .

 

 

 


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