DK31 Datasheet and Replacement
Type Designator: DK31
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 0.5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO-3
DK31 Substitution
DK31 Datasheet (PDF)
dk31.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK31NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards: GJB33 -85, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching voltage
dk319.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK319NPN Silicon Low Frequency High Power Transistor Features: 1. Three pins isnt connected with the cover. It could be produced according to the requirement. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4.
dk313.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK313NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards: GJB33A -97. 4. Use for high power switch circuit,switching voltage-stabilized sourcefy
Datasheet: DK11 , DK150 , DK151 , DK200 , DK201 , DK30 , DK300 , DK301 , 2SC828 , DK313 , DK319 , DK50 , DK51 , DMA20101 , DMA20201 , DMA20401 , DMA20402 .
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