KST50 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KST50
Código: AS1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.3 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de transistor bipolar KST50
KST50 Datasheet (PDF)
kst50.pdf
SMD Type TransistorsNPN Darlington TransistorsKST50; KST51; KST52(BST50; BST51; BST52)SOT-89 Unit: mm+0.1Features 4.50+0.1 1.50-0.1-0.11.80+0.1-0.1High current (max. 0.5 A)Low voltage (max. 80 V)Integrated diode and resistor.+0.1 +0.10.48-0.1 0.53+0.1 0.44-0.1-0.11. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta = 25Parameter Symbo
kst5088.pdf
KST5088/50893Low Noise Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage: KST5088 35 V: KST5089 30 VVCEO Collector-Emitter Voltage: KST5088 30 V: KST5089 25 VVEBO Emitter-Base Voltage 4.5 VIC Collector Current 50 mAPC
kst5086 kst5087.pdf
KST5086/5087Low Noise Transistor32SOT-231PNP Epitaxial Silicon Transistor1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -3 VIC Collector Current -50 mAPC Collector Power Dissipation 350 mWTSTG Storage Te
kst5088.pdf
KST5088/5089 NPN EPITAXIAL SILICON TRANSISTORLOW NOISE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO:KST5088 35 V:KST5089 30 V Collector-Emitter Voltage VCEO :KST5088 30 V:KST5089 25 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 50 mA Collector Dissipation PC 350 mW Storage Temperature TSTG
kst5086.pdf
KST5086/5087 PNP EPITAXIAL SILICON TRANSISTORLOW NOISE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCllector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -3 VCollector Current IC -50 mACollector Dissipation PC 350 mWStorage Temperature TSTG 150 1. Base 2. Emitter 3. CollectorELECTRICAL CHARA
kst5086 kst5087.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
