KST50 - аналоги, параметры транзистора - Справочник транзисторов

KST50 даташит

..1. Size:42K kexin
kst50.pdf pdf_icon

SMD Type Transistors NPN Darlington Transistors KST50; KST51; KST52 (BST50; BST51; BST52) SOT-89 Unit mm +0.1 Features 4.50+0.1 1.50-0.1 -0.1 1.80+0.1 -0.1 High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. +0.1 +0.1 0.48-0.1 0.53+0.1 0.44-0.1 -0.1 1. Base 3.00+0.1 -0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbo

0.1. Size:56K fairchild semi
kst5088.pdf pdf_icon

KST5088/5089 3 Low Noise Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage KST5088 35 V KST5089 30 V VCEO Collector-Emitter Voltage KST5088 30 V KST5089 25 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current 50 mA PC

0.2. Size:57K fairchild semi
kst5086 kst5087.pdf pdf_icon

KST5086/5087 Low Noise Transistor 3 2 SOT-23 1 PNP Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -3 V IC Collector Current -50 mA PC Collector Power Dissipation 350 mW TSTG Storage Te

0.3. Size:56K samsung
kst5088.pdf pdf_icon

KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO KST5088 35 V KST5089 30 V Collector-Emitter Voltage VCEO KST5088 30 V KST5089 25 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 50 mA Collector Dissipation PC 350 mW Storage Temperature TSTG