KST51 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KST51
Código: AS2
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.3 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de KST51
KST51 Datasheet (PDF)
kst51.pdf

SMD Type TransistorsNPN Darlington TransistorsKST50; KST51; KST52(BST50; BST51; BST52)SOT-89 Unit: mm+0.1Features 4.50+0.1 1.50-0.1-0.11.80+0.1-0.1High current (max. 0.5 A)Low voltage (max. 80 V)Integrated diode and resistor.+0.1 +0.10.48-0.1 0.53+0.1 0.44-0.1-0.11. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta = 25Parameter Symbo
kst5179.pdf

KST5179RF Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 20 VVCEO Collector-Emitter Voltage 12 VVEBO Emitter-Base Voltage 2.5 VIC Collector Current 50 mAPC Collector Power Dissipation (Ta=25C) 350 mWDerate a
kst5179.pdf

KST5179 NPN EPITAXIAL SILICON TRANSISTORRF AMPLIFIER TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO V2.5Collector Current IC mA50mWCollector Dissipation (TA=25 ) PC350mW/ Derate above 25 2.8Junction Temperature TJ150Storage Tem
Otros transistores... FMBT5401LG , GCA1943T , GMA6801 , GMC6802 , KSR16 , KSR16-HF , KSS1C200LT1G , KST50 , MPSA42 , KST52 , KSU13003E , KSU13003ER , KSU13003HR , KSU13005A , KT9128AC , KT9147A , L14D1 .
History: SFT325 | BD534K



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