KST51 Datasheet, Equivalent, Cross Reference Search
Type Designator: KST51
SMD Transistor Code: AS2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.3 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: SOT-89
KST51 Transistor Equivalent Substitute - Cross-Reference Search
KST51 Datasheet (PDF)
kst51.pdf
SMD Type TransistorsNPN Darlington TransistorsKST50; KST51; KST52(BST50; BST51; BST52)SOT-89 Unit: mm+0.1Features 4.50+0.1 1.50-0.1-0.11.80+0.1-0.1High current (max. 0.5 A)Low voltage (max. 80 V)Integrated diode and resistor.+0.1 +0.10.48-0.1 0.53+0.1 0.44-0.1-0.11. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta = 25Parameter Symbo
kst5179.pdf
KST5179RF Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 20 VVCEO Collector-Emitter Voltage 12 VVEBO Emitter-Base Voltage 2.5 VIC Collector Current 50 mAPC Collector Power Dissipation (Ta=25C) 350 mWDerate a
kst5179.pdf
KST5179 NPN EPITAXIAL SILICON TRANSISTORRF AMPLIFIER TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO V2.5Collector Current IC mA50mWCollector Dissipation (TA=25 ) PC350mW/ Derate above 25 2.8Junction Temperature TJ150Storage Tem
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
