EMX2DXV6T5G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMX2DXV6T5G

Código: 3R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.357 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT-563

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EMX2DXV6T5G datasheet

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 emx2dxv6t5g.pdf pdf_icon

EMX2DXV6T5G

EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features DUAL NPN GENERAL Reduces Board Space PURPOSE AMPLIFIER Hig

 4.1. Size:121K  onsemi
 emx2dxv6t5-d.pdf pdf_icon

EMX2DXV6T5G

EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features DUAL NPN GENERAL Reduces Board Space PURPOSE AMPLIFIER Hig

 4.2. Size:165K  onsemi
 emx2dxv6t5.pdf pdf_icon

EMX2DXV6T5G

DATA SHEET www.onsemi.com Dual NPN General Purpose DUAL NPN GENERAL PURPOSE AMPLIFIER Amplifier Transistor TRANSISTORS SURFACE MOUNT EMX2DXV6T5 This NPN transistor is designed for general purpose amplifier (3) (2) (1) applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. Features Q2

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