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EMX2DXV6T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EMX2DXV6T5G
   Código: 3R
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.357 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT-563
 

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EMX2DXV6T5G Datasheet (PDF)

 ..1. Size:121K  onsemi
 emx2dxv6t5g.pdf pdf_icon

EMX2DXV6T5G

EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig

 4.1. Size:121K  onsemi
 emx2dxv6t5-d.pdf pdf_icon

EMX2DXV6T5G

EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig

 4.2. Size:165K  onsemi
 emx2dxv6t5.pdf pdf_icon

EMX2DXV6T5G

DATA SHEETwww.onsemi.comDual NPN General Purpose DUAL NPN GENERALPURPOSE AMPLIFIERAmplifier TransistorTRANSISTORSSURFACE MOUNTEMX2DXV6T5This NPN transistor is designed for general purpose amplifier(3) (2) (1)applications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardspace is at a premium.FeaturesQ2

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