EMX2DXV6T5G Datasheet, Equivalent, Cross Reference Search
Type Designator: EMX2DXV6T5G
SMD Transistor Code: 3R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.357 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-563
EMX2DXV6T5G Transistor Equivalent Substitute - Cross-Reference Search
EMX2DXV6T5G Datasheet (PDF)
emx2dxv6t5g.pdf
EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig
emx2dxv6t5-d.pdf
EMX2DXV6T5Preferred DevicesDual NPN General PurposeAmplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesDUAL NPN GENERAL Reduces Board SpacePURPOSE AMPLIFIER Hig
emx2dxv6t5.pdf
DATA SHEETwww.onsemi.comDual NPN General Purpose DUAL NPN GENERALPURPOSE AMPLIFIERAmplifier TransistorTRANSISTORSSURFACE MOUNTEMX2DXV6T5This NPN transistor is designed for general purpose amplifier(3) (2) (1)applications. This device is housed in the SOT-563 package which isdesigned for low power surface mount applications, where boardspace is at a premium.FeaturesQ2
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
