DD04 Todos los transistores

 ..1. Size:23K  shaanxi
 dd04.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DD04 NPN Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustment. 4. Quality Class JP, JT, JCT, GS, G,

 0.1. Size:291K  1
 ndf04n60z ndd04n60z.pdf

NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Param

 0.2. Size:148K  1
 ndf04n60z ndp04n60z ndd04n60z.pdf

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant 600 V 1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts 4 ABSOLUTE MAXIMUM RATINGS

 0.3. Size:290K  fairchild semi
 fdd044an03l fdu044an03l.pdf

December 2003 FDD044AN03L / FDU044AN03L N-Channel PowerTrench MOSFET 30V, 35A, 4.4m Features Applications rDS(ON) = 3.6m (Typ.), VGS = 4.5V, ID = 35A 12V Automotive Load Control Qg(5) = 48nC (Typ.), VGS = 5V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode ABS UIS Capability (Single Pulse and

 0.4. Size:118K  onsemi
 ndd04n50z.pdf

NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(on) (MAX) @ 1.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 500 V 2.7 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Rating Symbol Value Unit

 0.5. Size:136K  onsemi
 ndf04n60z ndd04n60z.pdf

NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Paramete

 0.6. Size:130K  onsemi
 ndf04n60z ndp04n60z ndd04n60z.pdf

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features http //onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested 600 V 2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) D (

 0.7. Size:152K  onsemi
 ndf04n62z ndd04n62z.pdf

NDF04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 2.0 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(ON) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 620 V 2.0 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Parameter Symbol

 0.8. Size:128K  samhop
 sdu04n65 sdd04n65.pdf

Green SDU/D04N65 Product SamHop Microelectronics corp. Ver 2.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 650V 4A 2.5 @VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERING IN

 0.9. Size:155K  samhop
 sdu04n60 sdd04n60.pdf

Green Product SDU/D04N60 a S mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 600V 4A 2.1 @ VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERIN

 0.10. Size:145K  china
 3dd04t.pdf

 0.11. Size:145K  china
 dd04t.pdf

 0.12. Size:327K  inchange semiconductor
 ndd04n60z-1g.pdf

isc N-Channel MOSFET Transistor NDD04N60Z-1G FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive

 0.13. Size:309K  inchange semiconductor
 fdd044an03l.pdf

isc N-Channel MOSFET Transistor FDD044AN03L FEATURES Drain Current I =21A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =3.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno