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DMA50101 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMA50101
   Código: A0
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 210
   Paquete / Cubierta: SMINI5-F3-B
 

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DMA50101 Datasheet (PDF)

 ..1. Size:406K  panasonic
dma50101.pdf pdf_icon

DMA50101

This product complies with the RoHS Directive (EU 2002/95/EC).DMA50101Silicon PNP epitaxial planar typeFor general amplificationDMA20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio

 9.1. Size:302K  fairchild semi
fdma507pz.pdf pdf_icon

DMA50101

May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist

 9.2. Size:405K  panasonic
dma50201.pdf pdf_icon

DMA50101

This product complies with the RoHS Directive (EU 2002/95/EC).DMA50201Silicon PNP epitaxial planar typeFor general amplificationDMA20102 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio

 9.3. Size:409K  panasonic
dma506e1.pdf pdf_icon

DMA50101

This product complies with the RoHS Directive (EU 2002/95/EC).DMA506E1Silicon PNP epitaxial planar typeFor general amplificationDMA206E1 in SMini6 type package Package Features High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here

Otros transistores... CHUMF5GP , CHUMF7GP , CHUMF8GP , DD03T , DD04 , DD04T , DD05 , DD05T , NJW0281G , DMA50201 , DMA50401 , DMA50601 , DMA50601 , DMBT2222 , DMBT2222A , DMBT2907A , DMBT3904 .

History: SDM4014

 

 
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