Биполярный транзистор DMA50101 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DMA50101
Маркировка: A0
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 210
Корпус транзистора: SMINI5-F3-B
DMA50101 Datasheet (PDF)
dma50101.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50101Silicon PNP epitaxial planar typeFor general amplificationDMA20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio
fdma507pz.pdf
May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist
dma50201.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50201Silicon PNP epitaxial planar typeFor general amplificationDMA20102 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio
dma506e1.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA506E1Silicon PNP epitaxial planar typeFor general amplificationDMA206E1 in SMini6 type package Package Features High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here
dma50401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50401Silicon PNP epitaxial planar typeFor general amplificationDMA20401 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reductio
dma50601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50601Silicon PNP epitaxial planar typeFor general amplificationDMA20601 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reductio
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050