DMA50101 - параметры, поиск аналогов, даташиты транзистора

DMA50101 Datasheet (PDF)

..1. Size:406K panasonic
dma50101.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC).DMA50101Silicon PNP epitaxial planar typeFor general amplificationDMA20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio

9.1. Size:302K fairchild semi
fdma507pz.pdf pdf_icon

May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist

9.2. Size:405K panasonic
dma50201.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC).DMA50201Silicon PNP epitaxial planar typeFor general amplificationDMA20102 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio

9.3. Size:409K panasonic
dma506e1.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC).DMA506E1Silicon PNP epitaxial planar typeFor general amplificationDMA206E1 in SMini6 type package Package Features High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here