DMA50601
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMA50601
Código: B2
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 210
Paquete / Cubierta:
SOT-363
Búsqueda de reemplazo de transistor bipolar DMA50601
DMA50601
Datasheet (PDF)
..1. Size:396K panasonic
dma50601.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50601Silicon PNP epitaxial planar typeFor general amplificationDMA20601 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reductio
8.1. Size:409K panasonic
dma506e1.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA506E1Silicon PNP epitaxial planar typeFor general amplificationDMA206E1 in SMini6 type package Package Features High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here
9.1. Size:302K fairchild semi
fdma507pz.pdf
May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist
9.2. Size:405K panasonic
dma50201.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50201Silicon PNP epitaxial planar typeFor general amplificationDMA20102 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio
9.3. Size:406K panasonic
dma50101.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50101Silicon PNP epitaxial planar typeFor general amplificationDMA20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio
9.4. Size:395K panasonic
dma50401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50401Silicon PNP epitaxial planar typeFor general amplificationDMA20401 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reductio
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