DMBT9013 Todos los transistores

 

DMBT9013 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMBT9013
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT-23
     - Selección de transistores por parámetros

 

DMBT9013 Datasheet (PDF)

 ..1. Size:144K  dc components
 dmbt9013.pdf pdf_icon

DMBT9013

DC COMPONENTS CO., LTD.DMBT9013DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

 7.1. Size:77K  dc components
 dmbt9018.pdf pdf_icon

DMBT9013

DC COMPONENTS CO., LTD.DMBT9018DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in AM/FM amplifier and local oscillator of FM/VHF tuner.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC) .045(1.15).034

 7.2. Size:173K  dc components
 dmbt9012.pdf pdf_icon

DMBT9013

DC COMPONENTS CO., LTD.DMBT9012DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

 7.3. Size:157K  dc components
 dmbt9014.pdf pdf_icon

DMBT9013

DC COMPONENTS CO., LTD.DMBT9014DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in pre-amplifier of low level and low noise.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD882SQ-E | DTC115EEB

 

 
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