DME50C01 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DME50C01
Código: A4
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 210
Paquete / Cubierta: SMINI5-F3-B
Búsqueda de reemplazo de transistor bipolar DME50C01
DME50C01 Datasheet (PDF)
dme50c01.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DME50C01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationDME20C01 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B C
dme50101.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DME50101Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationDME20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Co
dme50501.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DME50501Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationDME20501 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B C
dme50b01.pdf
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This product complies with the RoHS Directive (EU 2002/95/EC).DME50B01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationDME20B01 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B C
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: DMC50601
History: DMC50601
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Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: C4977 | BP4N45S | BP4N38S | BP18N98S | BP15N98T | BM8N08A | BM3P03A | BM1P40A | BM05P06B | BM05P06A | BM05N06B | BM03P05 | BM03N05 | BL15P15A | BL15N15A | BL10P15A | BL10N15A | BA16P25A | BA16N25A | BA15P26B | BA15P26A