E13005D-213 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: E13005D-213
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz
Ganancia de corriente contínua (hfe): 15
Empaquetado / Estuche: TO-220
Búsqueda de reemplazo de transistor bipolar E13005D-213
E13005D-213 Datasheet (PDF)
1.1. e13005d-213.pdf 
Size:204K _upd
E13005D-213 ® Pb E13005D-213 Pb Free Plating Product MJE Power Transistor with Damping Diode Product specification Silicon NPN Power Transistor MJE13005 series DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. _____________________ Absolute Maximum Ratings ( Ta = 25℃ ) Active anti-saturation netwo
2.1. mje13005d-k.pdf Size:115K _utc
UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in energ
3.1. mje13005dq4.pdf Size:251K _update
MJE13005DQ4(3DD13005DQ4) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T
3.2. mje13005dq5.pdf Size:239K _update
MJE13005DQ5(3DD13005DQ5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P
3.3. mje13005dt3.pdf Size:193K _update
MJE13005DT3 (3DD13005DT3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 A B
3.4. mje13005dt7.pdf Size:204K _update
MJE13005DT7(3DD13005DT7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A
3.5. mje13005dp5.pdf Size:292K _update
MJE13005DP5(3DD13005DP5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C
3.6. mje13005drb.pdf Size:235K _update
MJE13005DRB 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25℃)
3.7. mje13005dq3.pdf Size:244K _update
MJE13005DQ3(3DD13005DQ3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P
3.8. mje13005dq7.pdf Size:248K _update
MJE13005DQ7(3DD13005DQ7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P
3.9. mje13005dc.pdf Size:857K _update
SEMICONDUCTOR MJE13005DC TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. ·Built-in Free wheeling Diode makes efficient anti saturation operation. ·Suitable for half bridge light ballast Applications. ·Low base drive requirement. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collec
3.10. mje13005d.pdf Size:118K _utc
UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F ? DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC MJE1
3.11. mje13005d.pdf Size:51K _kec
SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHARACT
3.12. mje13005df.pdf Size:375K _kec
SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C ·Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S ·Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E ·Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM RATI
3.13. mje13005d.pdf Size:232K _sisemi
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13005D NPN D / D SERIES TRANSISTORS MJE13005D NPN D 系列晶体
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