ECH8503-TL-H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ECH8503-TL-H
Código: MC
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.6 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 280 MHz
Capacitancia de salida (Cc): 42 pF
Ganancia de corriente contínua (hfe): 200
Empaquetado / Estuche: ECH8
Búsqueda de reemplazo de transistor bipolar ECH8503-TL-H
ECH8503-TL-H Datasheet (PDF)
1.1. ech8503-tl-h.pdf 
Size:208K _upd
Ordering number : ENA1680A ECH8503 Bipolar Transistor http://onsemi.com – – ( ) 50V, 5A, Low VCE sat PNP Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO -50 V Collector-to-Emi
3.1. ech8503.pdf Size:323K _sanyo
ECH8503 Ordering number : ENA1680 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor ECH8503 Motor Drive Applications Features Composite type, facilitating high-density mounting Mounting height 0.9mm Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO -50 V Col
4.1. ech8502-tl-h.pdf Size:287K _upd
Ordering number : ENA1758A ECH8502 Bipolar Transistor http://onsemi.com (–) (–) ( ) 50V, 30A, Low VCE sat Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting Mounting height 0.9mm • • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE(sat)= --0.12V(typ.)@IC= --2.5A • Halogen free compliance ( ): PN
4.2. ech8501.pdf Size:421K _sanyo
ECH8501 Ordering number : ENA1581 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistors ECH8501 Gate Drive Applications Features Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= --2.5A Halogen free compliance ( ): PNP
4.3. ech8502.pdf Size:441K _sanyo
ECH8502 Ordering number : ENA1758 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistors ECH8502 Gate Drive Applications Features Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE(sat)= --0.12V(typ.)@IC= --2.5A Halogen free compliance ( ): PNP
Otros transistores... DXT5616U , DXT696BK , DXTD882 , DXTN26070CY , E13005-225 , E13005-250 , E13005D-213 , ECH8502-TL-H , BC546 , EML22 , EMT18 , EMT1DXV6T1G , EMT1DXV6T5G , EMT1FHA , EMT2 , EMT2FHA , EMT3 .
