ECH8503-TL-H Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ECH8503-TL-H

Código: MC

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.6 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 280 MHz

Capacitancia de salida (Cc): 42 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: ECH8

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ECH8503-TL-H datasheet

 7.1. Size:323K  sanyo
 ech8503.pdf pdf_icon

ECH8503-TL-H

ECH8503 Ordering number ENA1680 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor ECH8503 Motor Drive Applications Features Composite type, facilitating high-density mounting Mounting height 0.9mm Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO

 7.2. Size:208K  onsemi
 ech8503.pdf pdf_icon

ECH8503-TL-H

Ordering number ENA1680A ECH8503 Bipolar Transistor http //onsemi.com ( ) 50V, 5A, Low VCE sat PNP Dual ECH8 Features Composite type, facilitating high-density mounting Mounting height 0.9mm Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO -50 V Collector-to-Emi

 8.1. Size:441K  sanyo
 ech8502.pdf pdf_icon

ECH8503-TL-H

ECH8502 Ordering number ENA1758 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistors ECH8502 Gate Drive Applications Features Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN VCE(sat)=0.08V(typ.)@IC=2.5A PNP VCE(sat)= --0.12V(typ.)@IC= --2.5A Halogen free complianc

 8.2. Size:421K  sanyo
 ech8501.pdf pdf_icon

ECH8503-TL-H

ECH8501 Ordering number ENA1581 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistors ECH8501 Gate Drive Applications Features Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN VCE(sat)=0.075V(typ.)@IC=2.5A PNP VCE(sat)= --0.1V(typ.)@IC= --2.5A Halogen free complianc

MOSTRAR MÁS

Otros transistores... DXT5616U, DXT696BK, DXTD882, DXTN26070CY, E13005-225, E13005-250, E13005D-213, ECH8502-TL-H, A940, EML22, EMT18, EMT1DXV6T1G, EMT1DXV6T5G, EMT1FHA, EMT2, EMT2FHA, EMT3