EMT1DXV6T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMT1DXV6T5G
Código: 3T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.357 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SOT-563
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EMT1DXV6T5G datasheet
emt1dxv6t5g.pdf
EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices (4) (5) (6) MAXIMUM RATINGS
emt1dxv6t1g.pdf
EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices (4) (5) (6) MAXIMUM RATINGS
emt1dxv6t1 5.pdf
EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices (4) (5) (6) MAXIMUM RATINGS
emt1dxv6.pdf
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Otros transistores... E13005-225, E13005-250, E13005D-213, ECH8502-TL-H, ECH8503-TL-H, EML22, EMT18, EMT1DXV6T1G, TIP35C, EMT1FHA, EMT2, EMT2FHA, EMT3, EMT3FHA, L2SA1577QT1G, L2SA1577RT1G, L2SA2030M3T5G
History: DMC205E0
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