EMT1DXV6T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMT1DXV6T5G
Código: 3T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.357 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT-563
Búsqueda de reemplazo de transistor bipolar EMT1DXV6T5G
EMT1DXV6T5G Datasheet (PDF)
emt1dxv6t5g.pdf
EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS
emt1dxv6t1g.pdf
EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS
emt1dxv6t1 5.pdf
EMT1DXV6T1,EMT1DXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices(4) (5) (6)MAXIMUM RATINGS
emt1dxv6.pdf
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Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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