EMT1DXV6T5G. Аналоги и основные параметры
Наименование производителя: EMT1DXV6T5G
Маркировка: 3T
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.357 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 140 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hFE): 120
Корпус транзистора: SOT-563
Аналоги (замена) для EMT1DXV6T5G
- подборⓘ биполярного транзистора по параметрам
EMT1DXV6T5G даташит
emt1dxv6t5g.pdf
EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices (4) (5) (6) MAXIMUM RATINGS
emt1dxv6t1g.pdf
EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices (4) (5) (6) MAXIMUM RATINGS
emt1dxv6t1 5.pdf
EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http //onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V These are Pb-Free Devices (4) (5) (6) MAXIMUM RATINGS
emt1dxv6.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
Другие транзисторы: E13005-225, E13005-250, E13005D-213, ECH8502-TL-H, ECH8503-TL-H, EML22, EMT18, EMT1DXV6T1G, TIP35C, EMT1FHA, EMT2, EMT2FHA, EMT3, EMT3FHA, L2SA1577QT1G, L2SA1577RT1G, L2SA2030M3T5G
🌐 : EN ES РУ
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
tip31a datasheet | d882 datasheet | tip29 transistor | s9014 transistor datasheet | 2sa1491 | 2sc1313 datasheet | 2sc984 | 2sa872




