EMT2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMT2 / UMT2N / IMT2ADatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Tr1 and Tr2 EMT6 UMT6VCEO-50VIC-150mA EMT2 UMT2NSOT-563 SOT-363 SMT6lFeaturesl1) Two 2SA1037AK chips in a EMT, UMT or SMT package.IMT2A2) Mounting possible with EMT3, UMT3 or SMT3SOT-457

EMT2 / UMT2N / IMT2A Transistors General purpose (dual transistors) EMT2 / UMT2N / IMT2A External dimensions (Unit : mm) Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. EMT2(4) (3) ( ) ( )5 2(6) (1)1.2 Equivalent circuits 1.6EMT2 / UMT2N IMT2A(3) (2) (1) (4) (5) (6)Each lead has same dimensionsROHM : EMT6Tr1 Tr1Tr2 Tr2UMT2N(4) (5) (

EMT2FHA / UMT2NFHA / IMT2AFRAEMT2 / UMT2N / IMT2A TransistorsAEC-Q101 QualifiedGeneral purpose (dual transistors) EMT2 / UMT2N / IMT2A EMT2FHA / UMT2NFHA / IMT2AFRA External dimensions (Unit : mm) Features2SA1037AKFRA1) Two 2SA1037AK chips in a EMT or UMT or SMT package. EMT2FHAEMT2(4) (3)( ) ( )5 2(6) (1)1.2 Equivalent circuits1.6EMT2FHA / UMT2NFHA IMT2

EMT2FHA / UMT2NFHA / IMT2AFRAEMT2 / UMT2N / IMT2A TransistorsAEC-Q101 QualifiedGeneral purpose (dual transistors) EMT2 / UMT2N / IMT2A EMT2FHA / UMT2NFHA / IMT2AFRA External dimensions (Unit : mm) Features2SA1037AKFRA1) Two 2SA1037AK chips in a EMT or UMT or SMT package. EMT2FHAEMT2(4) (3)( ) ( )5 2(6) (1)1.2 Equivalent circuits1.6EMT2FHA / UMT2NFHA IMT2

EMT2DXV6T5Dual General PurposeTransistorPNP DualThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications. Lead-Free Solder Plating (3) (2) (1) Low VCE(SAT),

CHENMKO ENTERPRISE CO.,LTDCHEMT2GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabili