L2SC5343RLT1G Todos los transistores

 ..1. Size:397K  lrc
 l2sc5343rlt1g.pdf

LESHAN RADIO COMPANY, LTD. L2SC5343QLT1G General Purpose Transistors Series NPN Silicon S-L2SC5343QLT1G FEATURE Series Excellent hFE linearity hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3 hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise NF=1Db(Typ).at f=1KHz. We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applic

 6.1. Size:392K  lrc
 l2sc5343qlt1g.pdf

LESHAN RADIO COMPANY, LTD. L2SC5343QLT1G General Purpose Transistors Series S-L2SC5343QLT1G NPN Silicon FEATURE Series Excellent hFE linearity 3 hFE(2)=100(Typ) at VCE=6V,IC=150Ma hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise NF=1Db(Typ).at f=1KHz. 2 We declare that the material of product compliance with RoHS requirements. SOT 23 S- Prefix for Automotive a

 6.2. Size:383K  lrc
 l2sc5343slt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC5343QLT1G NPN Silicon Series S-L2SC5343QLT1G FEATURE Excellent hFE linearity Series hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3 hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). Low noise NF=1Db(Typ).at f=1KHz. 1 2 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Appli

 9.1. Size:330K  lrc
 l2sc5658qm3t5g.pdf

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h

 9.2. Size:44K  lrc
 l2sc5635lt1g.pdf

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635LT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) S-L2SC5635LT1G 2.High gain,low noise 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements;

 9.3. Size:2204K  lrc
 l2sc5635wt1g.pdf

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

 9.4. Size:158K  lrc
 l2sc5658rm3t5g.pdf

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h