L2SC5343RLT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: L2SC5343RLT1G
SMD Transistor Code: 7R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT-23
L2SC5343RLT1G Transistor Equivalent Substitute - Cross-Reference Search
L2SC5343RLT1G Datasheet (PDF)
l2sc5343rlt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesNPN SiliconS-L2SC5343QLT1GFEATURE SeriesExcellent hFE linearity :hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applic
l2sc5343qlt1g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5343QLT1GGeneral Purpose Transistors SeriesS-L2SC5343QLT1GNPN SiliconFEATURE Series Excellent hFE linearity 3:hFE(2)=100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). 1 Low noise:NF=1Db(Typ).at f=1KHz. 2 We declare that the material of product compliance with RoHS requirements.SOT 23 S- Prefix for Automotive a
l2sc5343slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SC5343QLT1GNPN Silicon SeriesS-L2SC5343QLT1GFEATURE Excellent hFE linearity Series:hFE(2)=100(Typ) at VCE=6V,IC=150Ma 3:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). Low noise:NF=1Db(Typ).at f=1KHz. 12 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Appli
l2sc5658qm3t5g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h
l2sc5635lt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635LT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)S-L2SC5635LT1G2.High gain,low noise3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.4.S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control Change Requirements;
l2sc5635wt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635WT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)2.High gain,low noise S-L2SC5635WT1G3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC
l2sc5658rm3t5g.pdf
LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
