L2SC5635LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: L2SC5635LT1G
   Código: HF1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 6 V
   Tensión emisor-base (Veb): 1.5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 5000 MHz
   Capacitancia de salida (Cc): 1 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT-23

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L2SC5635LT1G Datasheet (PDF)

..1. Size:44K lrc
l2sc5635lt1g.pdf

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635LT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)S-L2SC5635LT1G2.High gain,low noise3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.4.S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control Change Requirements;

6.1. Size:2204K lrc
l2sc5635wt1g.pdf

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635WT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)2.High gain,low noise S-L2SC5635WT1G3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC

8.1. Size:330K lrc
l2sc5658qm3t5g.pdf

LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h

8.2. Size:158K lrc
l2sc5658rm3t5g.pdf