All Transistors. L2SC5635LT1G Datasheet

 

L2SC5635LT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: L2SC5635LT1G
   SMD Transistor Code: HF1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 5000 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT-23

 L2SC5635LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

L2SC5635LT1G Datasheet (PDF)

 ..1. Size:44K  lrc
l2sc5635lt1g.pdf

L2SC5635LT1G
L2SC5635LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635LT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)S-L2SC5635LT1G2.High gain,low noise3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.4.S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control Change Requirements;

 6.1. Size:2204K  lrc
l2sc5635wt1g.pdf

L2SC5635LT1G
L2SC5635LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635WT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)2.High gain,low noise S-L2SC5635WT1G3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC

 8.1. Size:330K  lrc
l2sc5658qm3t5g.pdf

L2SC5635LT1G
L2SC5635LT1G

LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h

 8.2. Size:158K  lrc
l2sc5658rm3t5g.pdf

L2SC5635LT1G
L2SC5635LT1G

LESHAN RADIO COMPANY, LTD.L2SC5658QM3T5GNPN Silicon GeneralL2SC5658RM3T5GPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier3applications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardspace is at a premium.2Features1 Reduces Board SpaceSOT 723 High h

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
Back to Top