All Transistors. L2SC5635LT1G Datasheet

 

L2SC5635LT1G Datasheet and Replacement


   Type Designator: L2SC5635LT1G
   SMD Transistor Code: HF1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 5000 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT-23

 L2SC5635LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

L2SC5635LT1G Datasheet (PDF)

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L2SC5635LT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635LT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) S-L2SC5635LT1G 2.High gain,low noise 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements; ... See More ⇒

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 l2sc5635wt1g.pdf pdf_icon

L2SC5635LT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC... See More ⇒

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L2SC5635LT1G

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h... See More ⇒

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L2SC5635LT1G

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h... See More ⇒

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Datasheet: L2SA2030M3T5G , L2SC3837QLT1G , L2SC3837T1G , L2SC3838QLT1G , L2SC4226T1G , L2SC5343QLT1G , L2SC5343RLT1G , L2SC5343SLT1G , 2SB817 , L2SD1781KQLT1G , L8050HSLT1G , L8550HSLT1G , L9012 , L9013 , L9014 , LBC807-16DMT1G , LBC807-25DMT1G .

History: MUN2230LT1 | T1892 | MRF653S | L2SA1576ART1G | UN9215R | D42C3

Keywords - L2SC5635LT1G transistor datasheet

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