L2SC5635LT1G Datasheet. Specs and Replacement

Type Designator: L2SC5635LT1G  📄📄 

SMD Transistor Code: HF1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT-23

 L2SC5635LT1G Substitution

- BJT ⓘ Cross-Reference Search

 

L2SC5635LT1G datasheet

 ..1. Size:44K  lrc

l2sc5635lt1g.pdf pdf_icon

L2SC5635LT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635LT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) S-L2SC5635LT1G 2.High gain,low noise 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements; ... See More ⇒

 6.1. Size:2204K  lrc

l2sc5635wt1g.pdf pdf_icon

L2SC5635LT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC... See More ⇒

 8.1. Size:330K  lrc

l2sc5658qm3t5g.pdf pdf_icon

L2SC5635LT1G

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h... See More ⇒

 8.2. Size:158K  lrc

l2sc5658rm3t5g.pdf pdf_icon

L2SC5635LT1G

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h... See More ⇒

Detailed specifications: L2SA2030M3T5G, L2SC3837QLT1G, L2SC3837T1G, L2SC3838QLT1G, L2SC4226T1G, L2SC5343QLT1G, L2SC5343RLT1G, L2SC5343SLT1G, 2SB817, L2SD1781KQLT1G, L8050HSLT1G, L8550HSLT1G, L9012, L9013, L9014, LBC807-16DMT1G, LBC807-25DMT1G

Keywords - L2SC5635LT1G pdf specs

 L2SC5635LT1G cross reference

 L2SC5635LT1G equivalent finder

 L2SC5635LT1G pdf lookup

 L2SC5635LT1G substitution

 L2SC5635LT1G replacement