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L9012 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L9012
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 64
   Paquete / Cubierta: TO-92
 

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L9012 Datasheet (PDF)

 ..1. Size:151K  lrc
 l9012.pdf pdf_icon

L9012

LESHAN RADIO COMPANY, LTD.PNP Epitaxial Silicon L9012Transistor1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to L9013 TO-921 Excellent hFE linearity.1. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbo

 0.1. Size:75K  lrc
 l9012plt1g l9012qlt1g l9012rlt1g l9012slt1g.pdf pdf_icon

L9012

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

 0.2. Size:82K  lrc
 l9012plt1g.pdf pdf_icon

L9012

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

 0.3. Size:79K  lrc
 l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g l9012rlt3g.pdf pdf_icon

L9012

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L9012PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking

MOSTRAR MÁS

Otros transistores... L2SC4226T1G , L2SC5343QLT1G , L2SC5343RLT1G , L2SC5343SLT1G , L2SC5635LT1G , L2SD1781KQLT1G , L8050HSLT1G , L8550HSLT1G , S9013 , L9013 , L9014 , LBC807-16DMT1G , LBC807-25DMT1G , LBC807-40DMT1G , LBC817-16DMT1G , LBC817-16DPMT1G , LBC817-25DMT1G .

History: E20232 | 2SD1735 | 2SC292 | 3DD159D | 2SC4182 | 2SC4222 | PN3900

 

 
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