LBC807-16DMT1G Todos los transistores

 

LBC807-16DMT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LBC807-16DMT1G
   Código: 5A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.37 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-457
 

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LBC807-16DMT1G Datasheet (PDF)

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LBC807-16DMT1G

LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMTPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteDMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC807-4

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LBC807-16DMT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURELBC807-16LT1G Collector current capability IC = -500 mA.LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Au

 5.2. Size:77K  lrc
lbc807-16wt1g.pdf pdf_icon

LBC807-16DMT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Collector current capability IC = -500 mA. LBC807-16WT1G Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-16WT1G General purpose switching and amplification. PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other

 5.3. Size:138K  lrc
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf pdf_icon

LBC807-16DMT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN

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