Биполярный транзистор LBC807-16DMT1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: LBC807-16DMT1G
Маркировка: 5A
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.37
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 10
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
SOT-457
Аналоги (замена) для LBC807-16DMT1G
LBC807-16DMT1G
Datasheet (PDF)
..1. Size:173K lrc
lbc807-16dmt1g.pdf 
LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMTPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteDMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC807-4
5.1. Size:257K lrc
lbc807-16lt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURELBC807-16LT1G Collector current capability IC = -500 mA.LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Au
5.2. Size:77K lrc
lbc807-16wt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Collector current capability IC = -500 mA. LBC807-16WT1G Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-16WT1G General purpose switching and amplification. PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other
5.3. Size:138K lrc
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
5.4. Size:184K lrc
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
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