LBC807-40DMT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC807-40DMT1G
Código: 5C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.37 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT-457
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LBC807-40DMT1G Datasheet (PDF)
lbc807-40dmt1g.pdf

LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25 DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteS-LBC807-40DMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
lbc807-40wt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LBC807-40WT1GDEVICE MARKING AND ORDERING INFORMATIONS-LBC807-40WT1GDevice Marking Package Shipping LBC807-40WT1GYL SOT-323 3000/Tape&ReelS-
lbc807-40wt1g lbc807-40wt3g.pdf

LBC807-40WT1GS-LBC807-40WT1GPNP Silicon General Purpose Transistors1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
Otros transistores... L2SD1781KQLT1G , L8050HSLT1G , L8550HSLT1G , L9012 , L9013 , L9014 , LBC807-16DMT1G , LBC807-25DMT1G , D965 , LBC817-16DMT1G , LBC817-16DPMT1G , LBC817-25DMT1G , LBC817-40DMT1G , LBC817-40DPMT1G , LBC846ADW1T1G , LBC847CPDW1T1G , LBC848AWT1G .
History: SD340 | NTE2544 | 2N5870 | DTC124EUA | PBRN123YT
History: SD340 | NTE2544 | 2N5870 | DTC124EUA | PBRN123YT



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