LBC807-40DMT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC807-40DMT1G
Código: 5C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.37 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT-457
Búsqueda de reemplazo de transistor bipolar LBC807-40DMT1G
LBC807-40DMT1G Datasheet (PDF)
lbc807-40dmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25 DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteS-LBC807-40DMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
lbc807-40wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LBC807-40WT1GDEVICE MARKING AND ORDERING INFORMATIONS-LBC807-40WT1GDevice Marking Package Shipping LBC807-40WT1GYL SOT-323 3000/Tape&ReelS-
lbc807-40wt1g lbc807-40wt3g.pdf
LBC807-40WT1GS-LBC807-40WT1GPNP Silicon General Purpose Transistors1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
lbc807-40lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050