LBC807-40DMT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC807-40DMT1G

Código: 5C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.37 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: SOT-457

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LBC807-40DMT1G datasheet

 ..1. Size:170K  lrc
 lbc807-40dmt1g.pdf pdf_icon

LBC807-40DMT1G

LESHAN RADIO COMPANY, LTD. LBC807-16DMT1G LBC807-25DMT1G Dual General Purpose Transistors LBC807-40DMT1G PNP Duals S-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC807-25 DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC807-40DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 5.1. Size:107K  lrc
 lbc807-40wt1g.pdf pdf_icon

LBC807-40DMT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-40WT1G DEVICE MARKING AND ORDERING INFORMATION S-LBC807-40WT1G Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel S-

 5.2. Size:310K  lrc
 lbc807-40wt1g lbc807-40wt3g.pdf pdf_icon

LBC807-40DMT1G

LBC807-40WT1G S-LBC807-40WT1G PNP Silicon General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic

 5.3. Size:138K  lrc
 lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf pdf_icon

LBC807-40DMT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE LBC807-25LT1G LBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. 3 PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKIN

MOSTRAR MÁS

Otros transistores... L2SD1781KQLT1G, L8050HSLT1G, L8550HSLT1G, L9012, L9013, L9014, LBC807-16DMT1G, LBC807-25DMT1G, NJW0281G, LBC817-16DMT1G, LBC817-16DPMT1G, LBC817-25DMT1G, LBC817-40DMT1G, LBC817-40DPMT1G, LBC846ADW1T1G, LBC847CPDW1T1G, LBC848AWT1G