LBC807-40DMT1G Todos los transistores

Introduzca al menos 3 números o letras

LBC807-40DMT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LBC807-40DMT1G

Código: 5C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.37 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hfe): 250

Empaquetado / Estuche: SOT-457

Búsqueda de reemplazo de transistor bipolar LBC807-40DMT1G

 

LBC807-40DMT1G Datasheet (PDF)

1.1. lbc807-40dmt1g.pdf Size:170K _upd

LBC807-40DMT1G
LBC807-40DMT1G

LESHAN RADIO COMPANY, LTD. LBC807-16DMT1G LBC807-25DMT1G Dual General Purpose Transistors LBC807-40DMT1G PNP Duals S-LBC807-16DMT1G • We declare that the material of product compliance with RoHS requirements. S-LBC807-25 DMT1G • S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC807-40DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

1.2. lbc807-40wt1g.pdf Size:107K _lrc

LBC807-40DMT1G
LBC807-40DMT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-40WT1G DEVICE MARKING AND ORDERING INFORMATION S-LBC807-40WT1G Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel S-

 1.3. lbc807-40lt1g.pdf Size:184K _lrc

LBC807-40DMT1G
LBC807-40DMT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. LBC807-40LT1G General purpose switching and amplification. S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements. S-LBC8

Otros transistores... L2SD1781KQLT1G , L8050HSLT1G , L8550HSLT1G , L9012 , L9013 , L9014 , LBC807-16DMT1G , LBC807-25DMT1G , MPSA42 , LBC817-16DMT1G , LBC817-16DPMT1G , LBC817-25DMT1G , LBC817-40DMT1G , LBC817-40DPMT1G , LBC846ADW1T1G , LBC847CPDW1T1G , LBC848AWT1G .

Back to Top

 


LBC807-40DMT1G
  LBC807-40DMT1G
  LBC807-40DMT1G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |


Introduzca al menos 1 números o letras

 

Back to Top