Биполярный транзистор LBC807-40DMT1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: LBC807-40DMT1G
Маркировка: 5C
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.37
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 10
pf
Статический коэффициент передачи тока (hfe): 250
Корпус транзистора:
SOT-457
Аналоги (замена) для LBC807-40DMT1G
LBC807-40DMT1G
Datasheet (PDF)
..1. Size:170K lrc
lbc807-40dmt1g.pdf 
LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25 DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteS-LBC807-40DMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
5.1. Size:107K lrc
lbc807-40wt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LBC807-40WT1GDEVICE MARKING AND ORDERING INFORMATIONS-LBC807-40WT1GDevice Marking Package Shipping LBC807-40WT1GYL SOT-323 3000/Tape&ReelS-
5.2. Size:310K lrc
lbc807-40wt1g lbc807-40wt3g.pdf 
LBC807-40WT1GS-LBC807-40WT1GPNP Silicon General Purpose Transistors1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic
5.3. Size:138K lrc
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
5.4. Size:184K lrc
lbc807-40lt1g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
5.5. Size:184K lrc
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
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