LBC817-40DMT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC817-40DMT1G
Código: 6C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.37 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT-457
Búsqueda de reemplazo de transistor bipolar LBC817-40DMT1G
LBC817-40DMT1G Datasheet (PDF)
lbc817-40dmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC817-16DMT1GLBC817-25DMT1GDual General Purpose TransistorsLBC817-40DMT1GNPN DualsS-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40DM
lbc817-16dpmt1g lbc817-25dpmt1g lbc817-40dpmt1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
lbc817-16dpmt1g lbc817-25dpmt1g lbc817-40dpmt1g lbc817-16dpmt3g lbc817-25dpmt3g lbc817-40dpmt3g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
lbc817-40dpmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC817-16DPMT1GLBC817-25DPMT1GDual General Purpose TransistorsLBC817-40DPMT1GNPN/PNP DualsS-LBC817-16DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2884 | 2N909
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050